公开(公告)号：US20150381166A1

公开(公告)日：2015-12-31

申请号：US14631362

申请日：2015-02-25

Applicant: ABB OY

Inventor： Jukka-Pekka KITTILÄ ,  Mika Niemi ,  Mikko Saarinen

IPC: H03K17/567 ,  H03K17/16

CPC classification number: H03K17/567 ,  H03K17/0812 ,  H03K17/14 ,  H03K17/162 ,  H03K17/168

Abstract: A gate drive circuit creates a bipolar voltage to a gate of an IGB power transistor, and compensates for Miller currents of the IGB power transistor. The compensating is performed by a switching element connected in series with a capacitor between the gate (X4) and a supply voltage.

Abstract translation: 栅极驱动电路为IGB功率晶体管的栅极产生双极性电压，并补偿IGB功率晶体管的米勒电流。 补偿由在栅极（X4）和电源电压之间与电容器串联连接的开关元件来执行。