公开(公告)号：US20240313763A1

公开(公告)日：2024-09-19

申请号：US18423567

申请日：2024-01-26

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Yuki KUMAZAWA

IPC: H03K17/082 ,  H03K17/08 ,  H03K17/14

CPC classification number: H03K17/0828 ,  H03K17/14 ,  H03K2017/0806 ,  H03K2217/0027

Abstract: A semiconductor device includes a switching element performing a switching base on an input signal to operate a load, a detection circuit outputting a release signal upon detecting a predetermined state of the switching element, and a driving current control circuit including a latch circuit that latches a detection result obtained from a magnitude of a current flowing through the switching element and to be reset upon receiving the release signal from the detection circuit. The control circuit outputs, based on an output of the latch circuit a first driving current or a second driving current larger than the first driving current. The driving current is used for charging a gate capacitance of the switching element in an operation state of the semiconductor device. The control circuit sets the driving current to the first driving current upon the latch circuit being reset by the release signal.

公开(公告)号：US12074509B2

公开(公告)日：2024-08-27

申请号：US18316422

申请日：2023-05-12

Applicant: Solaredge Technologies Ltd.

Inventor： Ofir Bieber

IPC: H02M1/08 ,  H03K17/14

CPC classification number: H02M1/08 ,  H03K17/14

Abstract: A driver for improving reliability of a switch in a power device, comprising one or more sensors configured to sense an operational parameter of a power device. The driver comprises a controller configured to receive one or more sensor values from the respective sensors. The controller is configured to adjust a driving pulse according to the sensor values. The controller is configured to apply the driving pulse to one or more control terminal of one or more switch of the power device.

公开(公告)号：US20240223182A1

公开(公告)日：2024-07-04

申请号：US18089829

申请日：2022-12-28

Applicant: Cambridge GaN Devices Limited

Inventor： Florin Udrea ,  Philip Neaves ,  Loizos Efthymiou

IPC: H03K17/14 ,  H01L27/06 ,  H01L29/778

CPC classification number: H03K17/14 ,  H01L27/0605 ,  H01L27/0623 ,  H01L29/7786 ,  H03K2217/0063 ,  H03K2217/0072

Abstract: A power integrated circuit comprising: a heterojunction structure Gallium Nitride, GaN, chip comprising at least one GaN layer and at least one Aluminium Gallium Nitride, AlGaN, layer wherein the GaN chip comprises at least one main power device comprising a source terminal, a drain terminal, a gate terminal and a two-dimensional electron gas, 2DEG, formed at an interface between the AlGaN and GaN layers and between the source and drain terminals, wherein the gate terminal is configured to modulate at least a portion of the 2DEG when a charge is applied to the gate terminal, a driver comprising at least one low-side component and at least one high-side component, wherein the low-side component comprises a terminal connected to a low DC voltage rail and at least one other terminal connected to the gate terminal of the main power device; wherein the high-side component comprises at least one terminal connected to a high DC voltage rail and at least one other terminal connected to the gate of the main power device; wherein the at least one low-side component of the driver is configured to discharge an input capacitance of the main power device during a turn-off of the main power device and is monolithically integrated within the GaN chip; and wherein the at least one high-side component of the driver is configured to charge up the input capacitance of the main power device and is formed in a semiconductor region comprising a material other than GaN.

公开(公告)号：US20240097658A1

公开(公告)日：2024-03-21

申请号：US18178038

申请日：2023-03-03

Applicant: Kioxia Corporation

Inventor： Fumiya WATANABE ,  Toshifumi WATANABE ,  Kazuhiko SATOU ,  Shouichi OZAKI ,  Kenro KUBOTA ,  Atsuko SAEKI ,  Ryota TSUCHIYA ,  Harumi ABE

IPC: H03K3/011 ,  G11C7/10 ,  H03K17/14

CPC classification number: H03K3/011 ,  G11C7/1048 ,  H03K17/14 ,  G11C2207/2254 ,  H03K19/20

Abstract: A semiconductor device includes a first pad, a second pad, a first output driver provided for the first pad and configured to output a first transmission signal to the first pad, a second output driver provided for the second pad and configured to output a second transmission signal to the second pad, a register that stores first and second calibration values, a first reference resistor for the first pad and having a resistance value that is set according to the first calibration value, a second reference resistor for the second pad and having a resistance value that is set according to the second calibration value, a first setting circuit configured to calibrate a resistance value of the first output driver using the first reference resistor, and a second setting circuit configured to calibrate a resistance value of the second output driver using the second reference resistor.

公开(公告)号：US11867572B2

公开(公告)日：2024-01-09

申请号：US17521123

申请日：2021-11-08

Applicant: STMicroelectronics International N.V.

Inventor： Pijush Kanti Panja ,  Kallol Chatterjee ,  Atul Dwivedi

IPC: H03K17/14 ,  G01K7/14 ,  G01K7/01 ,  H03K19/018 ,  H03M1/12

CPC classification number: G01K7/14 ,  G01K7/01 ,  H03K17/14 ,  H03K19/018 ,  H03M1/1245

Abstract: A temperature sensing circuit a switched capacitor circuit selectively samples ΔVbe and Vbe voltages and provides the sampled voltages to inputs of an integrator. A quantization circuit quantizes outputs of the integrator to produce a bitstream. When a most recent bit of the bitstream is a logic zero, operation includes sampling and integration of ΔVbe a first given number of times to produce a voltage proportional to absolute temperature. When the most recent bit of the bitstream is a logic one, operation includes cause sampling and integration of Vbe a second given number of times to produce a voltage complementary to absolute temperature. A low pass filter and decimator filters and decimates the bitstream produced by the quantization circuit to produce a signal indicative of a temperature of a chip into which the temperature sensing circuit is placed.

公开(公告)号：US20230283164A1

公开(公告)日：2023-09-07

申请号：US18316422

申请日：2023-05-12

Applicant: Solaredge Technologies Ltd.

Inventor： Ofir Bieber

IPC: H02M1/08 ,  H03K17/14

CPC classification number: H02M1/08 ,  H03K17/14

Abstract: A driver for improving reliability of a switch in a power device, comprising one or more sensors configured to sense an operational parameter of a power device. The driver comprises a controller configured to receive one or more sensor values from the respective sensors. The controller is configured to adjust a driving pulse according to the sensor values. The controller is configured to apply the driving pulse to one or more control terminal of one or more switch of the power device.

公开(公告)号：US10084439B2

公开(公告)日：2018-09-25

申请号：US15375964

申请日：2016-12-12

Applicant: ABB Technology Oy

Inventor： Teemu Salmia ,  Jukka-Pekka Kittilä ,  Tero Herrala ,  Mikko Taulanne

IPC: H03B1/00 ,  H03K17/04 ,  H03K17/06 ,  H03K17/14

CPC classification number: H03K17/0406 ,  H03K17/06 ,  H03K17/14 ,  H03K17/163 ,  H03K17/168

Abstract: A gate driver circuit and a method of operating a gate driver circuit. The gate driver circuit comprising a high auxiliary voltage rail and a low auxiliary voltage rail for receiving high auxiliary voltage and low auxiliary voltage, output stage connected to the auxiliary voltage rails and comprising a control input and an output terminal for providing an output voltage of the gate driver, plurality of series connections of controllable switches and resistive components, wherein a first part of the plurality of series connections is connected between the high auxiliary voltage rail and control input of the output stage, and a second part of the plurality of series connections is connected between the low auxiliary voltage rail and control input of the output stage, and a control circuit for controlling the controllable switches for providing a control voltage and a control current to the control input of the output stage.

公开(公告)号：US09900000B2

公开(公告)日：2018-02-20

申请号：US15117487

申请日：2015-03-12

Applicant: DENSO CORPORATION

Inventor： Atsushi Kanamori ,  Sadahiro Akama ,  Kiyoshi Yamamoto ,  Atsushi Kobayashi

IPC: H03K17/14 ,  H03K17/16 ,  H03K17/28

CPC classification number: H03K17/14 ,  H03K17/165 ,  H03K17/168 ,  H03K17/28

Abstract: A drive device for controlling a power switching element to turn on and off includes: an on-side circuit performing an on operation of the power switching element; an off-side circuit performing an off operation of the power switching element; and a temperature detector detecting a temperature. At least one of the on-side and off-side circuits includes a current path for supplying or drawing a gate current of the power switching element and a switch circuit for switching the gate current. The switch circuit transitionally changes the gate current based on the temperature of the power switching element when the switching circuit switches the gate current.

公开(公告)号：US20180026625A1

公开(公告)日：2018-01-25

申请号：US15659534

申请日：2017-07-25

Applicant: ARM Ltd.

Inventor： Bal S. Sandhu ,  George McNeil Lattimore ,  Robert Campbell Aitken

IPC: H03K17/14 ,  G11C29/02 ,  G11C13/00 ,  H01L49/00 ,  H01L45/00

CPC classification number: H03K17/14 ,  G11C13/0007 ,  G11C13/0069 ,  G11C29/021 ,  G11C29/028 ,  G11C2013/0078 ,  H01L45/04 ,  H01L45/146 ,  H01L45/149 ,  H01L49/003

Abstract: Subject matter disclosed herein may relate to programmable current for correlated electron switches.

公开(公告)号：US09712148B2

公开(公告)日：2017-07-18

申请号：US14620932

申请日：2015-02-12

Applicant: Mitsubishi Electric Corporation

Inventor： Toru Daigo

IPC: H03K3/00 ,  H03K17/0412 ,  H03K17/14 ,  H03K17/16

CPC classification number: H03K17/04126 ,  H03K17/04123 ,  H03K17/14 ,  H03K17/161

Abstract: A switching device driving apparatus for preventing arm short circuit is provided, including: a first switching device driving unit for receiving a control signal for controlling a first switching device and a second switching device so that they will not turn ON at the same time and outputting an ON/OFF drive signal to the first switching device; and a second switching device driving unit for receiving the control signal and outputting an ON/OFF drive signal to the second switching device, in which the first switching device driving unit outputs a drive signal for increasing the delay of the ON timing of the first switching device with respect to the OFF timing of the second switching device with increase in ambient temperature.