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1.发明申请AGING DETERMINATION OF POWER SEMICONDUCTOR DEVICE IN ELECTRIC DRIVE SYSTEM 审中-公开电力驱动系统中功率半导体器件的老化确定公开(公告)号：US20160377671A1
公开(公告)日：2016-12-29
申请号：US15192579
申请日：2016-06-24
Applicant: ABB OY
Inventor： Jukka-Pekka Sjoroos , Kari Tikkanen
CPC classification number: G01R31/2608 , G01R31/005 , G01R31/2642 , H02M1/32 , H02M7/48 , H02P29/02
Abstract: Monitoring aging in an electric drive system includes energizing the electric drive system such that electrical current flows through a power semiconductor device therein, determining a value indicative of a voltage across the power semiconductor device, at a current level where voltage is substantially independent of temperature, comparing the determined value with a reference value, and outputting a signal responsive to a difference between the values that is indicative of an aging state of the power semiconductor device.
Abstract translation: 监测电力驱动系统中的老化包括激励电驱动系统，使得电流流过其中的功率半导体器件，在电压基本上与温度无关的电流水平上确定指示功率半导体器件两端的电压的值， 将所确定的值与参考值进行比较，并且响应于表示功率半导体器件的老化状态的值之间的差异输出信号。
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公开(公告)号：US10261122B2
公开(公告)日：2019-04-16
申请号：US15192579
申请日：2016-06-24
Applicant: ABB OY
Inventor： Jukka-Pekka Sjoroos , Kari Tikkanen
Abstract: Monitoring aging in an electric drive system includes energizing the electric drive system such that electrical current flows through a power semiconductor device therein, determining a value indicative of a voltage across the power semiconductor device, at a current level where voltage is substantially independent of temperature, comparing the determined value with a reference value, and outputting a signal responsive to a difference between the values that is indicative of an aging state of the power semiconductor device.
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3.发明申请TEMPERATURE ESTIMATION IN POWER SEMICONDUCTOR DEVICE IN ELECTRIC DRVIE SYSTEM 审中-公开功率半导体器件在电力系统中的温度估计公开(公告)号：US20160377488A1
公开(公告)日：2016-12-29
申请号：US15189902
申请日：2016-06-22
Applicant: ABB OY
Inventor： Jukka-Pekka Sjoroos , Kari Tikkanen
IPC: G01K7/00
CPC classification number: G01K7/00 , G01R31/2642 , H02M2001/327 , H02P29/02 , H03K17/18 , H03K2017/0806
Abstract: Estimating junction temperature in a power semiconductor includes monitoring electrical current direction so as to determine which of a first and a second power semiconductor is in an on-state, and sensing a voltage drop across the one of the power semiconductors. Voltage drop may be correlated with temperature according to a gain dependent upon a level of the electrical current.
Abstract translation: 估计功率半导体中的结温包括监测电流方向，以便确定第一和第二功率半导体中的哪一个处于导通状态，以及感测功率半导体之一上的电压降。 电压降可以根据取决于电流水平的增益与温度相关。
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