Abstract:
An exemplary power semiconductor switch is configured to be controlled on the basis of a gate voltage signal driven by a gate driver unit. The device includes a measuring component for generating a saturation voltage signal on the basis of a voltage over the power semiconductor switch, and an auxiliary switch connected between a saturation voltage signal line carrying the saturation voltage signal and an output of the gate driver unit driving the gate voltage signal. The auxiliary switch is configured to be controlled to a conductive state or a non-conductive state on the basis of the gate voltage signal. A feedback component is provided for generating a saturation feedback signal on the basis of the saturation voltage signal.