公开(公告)号：US20210265122A1

公开(公告)日：2021-08-26

申请号：US17253349

申请日：2019-08-28

Applicant: ABB Power Grids Switzerland AG

Inventor： Jakub Korbel ,  Olaf Hunger ,  Reto Karrer ,  Henrik Dahlgren ,  Alexey Sokolov ,  Giang PhamVan

IPC: H01H33/74 ,  H01H33/53

Abstract: A gas-insulated high or medium voltage circuit breaker comprising: a first arcing contact and a second arcing contact, wherein at least one of the two arcing contact is axially movable along a switching axis, wherein during a breaking operation, an arc between the first arcing contact and the second arcing contact is formed in a arcing region; a buffer housing defining a pressurizing volume; a nozzle arranged at a nozzle side of the pressurizing volume, the nozzle defining a channel connected to the pressurizing volume and directed to the arcing region, for blowing an arc extinguishing gas towards the arcing region during the breaking operation, the nozzle comprising a nozzle front face facing towards the interior of the pressurizing volume.

公开(公告)号：US20210104449A1

公开(公告)日：2021-04-08

申请号：US17046620

申请日：2019-04-08

Applicant: ABB Power Grids Switzerland AG

Inventor： Fabian Mohn ,  Alexey Sokolov ,  Chunlei Liu

IPC: H01L23/373 ,  H01L23/00 ,  H01L21/48

Abstract: A power semiconductor module includes a substrate with a metallization layer and a power semiconductor chip bonded to the metallization layer of the substrate. A metallic plate has a first surface bonded to a surface of the power semiconductor chip opposite to the substrate. The metallic plate has a central part and a border that are both bonded to the power semiconductor chip. The border of the metallic plate is structured in such a way that the metallic plate has less metal material per volume at the border as compared to the central part of the metallic plate. Metallic interconnection elements are bonded to a second surface of the metallic plate at the central part.