公开(公告)号：US11056408B2

公开(公告)日：2021-07-06

申请号：US16528791

申请日：2019-08-01

Applicant: ABB Power Grids Switzerland AG

Inventor： Chunlei Liu ,  Franc Dugal ,  Munaf Rahimo ,  Peter Karl Steimer

IPC: H01L23/051 ,  H01L23/62 ,  H01L23/492 ,  H01L25/07 ,  H02H3/02 ,  H01L25/18

Abstract: A power semiconductor device includes a Si chip providing a Si switch and a wide bandgap material chip providing a wide bandgap material switch, wherein the Si switch and the wide bandgap material switch are electrically connected in parallel. A method for controlling a power semiconductor device includes: during a normal operation mode, controlling at least the wide bandgap material switch for switching a current through the power semiconductor device by applying corresponding gate signals to at least the wide bandgap material switch; sensing a failure in the power semiconductor device; and, in the case of a sensed failure, controlling the Si switch by applying a gate signal, such that a current is generated in the Si chip heating the Si chip to a temperature forming a permanent conducting path through the Si chip.

公开(公告)号：US20210104449A1

公开(公告)日：2021-04-08

申请号：US17046620

申请日：2019-04-08

Applicant: ABB Power Grids Switzerland AG

Inventor： Fabian Mohn ,  Alexey Sokolov ,  Chunlei Liu

IPC: H01L23/373 ,  H01L23/00 ,  H01L21/48

Abstract: A power semiconductor module includes a substrate with a metallization layer and a power semiconductor chip bonded to the metallization layer of the substrate. A metallic plate has a first surface bonded to a surface of the power semiconductor chip opposite to the substrate. The metallic plate has a central part and a border that are both bonded to the power semiconductor chip. The border of the metallic plate is structured in such a way that the metallic plate has less metal material per volume at the border as compared to the central part of the metallic plate. Metallic interconnection elements are bonded to a second surface of the metallic plate at the central part.