公开(公告)号：US20130177041A1

公开(公告)日：2013-07-11

申请号：US13739742

申请日：2013-01-11

Applicant: ABB RESEARCH LTD

Inventor： Vinoth SUNDARAMOORTHY ,  Alexander Heinemann ,  Enea Bianda ,  Franz Zurfluh ,  Gerold Knapp ,  Iulian Nistor ,  Richard Bloch

IPC: H01L21/66 ,  G01K7/01

CPC classification number: H01L22/30 ,  G01K7/01 ,  G01K2217/00 ,  G01R31/2619 ,  G01R31/2642 ,  H03K17/18 ,  H03K2017/0806

Abstract: A system and method are provided for monitoring in real time the operating state of an IGBT device, to determine a junction temperature and/or the remaining lifetime of an IGBT device. The system includes a differential unit configured to receive a gate-emitter voltage characteristic of the IGBT device to be measured and to differentiate the gate-emitter voltage characteristic to obtain pulses correlating with edges formed by a Miller plateau phase during a switch-off phase of the IGBT device. The system also includes a timer unit configured to measure the time delay between the obtained pulses indicating the start and end of the Miller plateau phase during the switch-off phase of the IGBT device, and a junction temperature calculation unit configured to determine at least one of the junction temperature of the IGBT device and/or the remaining lifetime of the IGBT device based on the measured time delay.

Abstract translation: 提供一种系统和方法，用于实时监测IGBT器件的工作状态，以确定IGBT器件的结温和/或剩余寿命。 该系统包括差分单元，其被配置为接收要测量的IGBT器件的栅极 - 发射极电压特性，并且区分栅 - 发射极电压特性，以在关断阶段期间获得与由Miller平台相形成的边缘相关的脉冲 IGBT器件。 该系统还包括定时器单元，其被配置为测量在IGBT器件的关断阶段期间指示米勒平台相开始和结束的获得的脉冲之间的时间延迟，以及结温计算单元，其被配置为确定至少一个 的IGBT器件的结温和/或IGBT器件的剩余寿命。

公开(公告)号：US09039279B2

公开(公告)日：2015-05-26

申请号：US13739742

申请日：2013-01-11

Applicant: ABB RESEARCH LTD

Inventor： Vinoth Sundaramoorthy ,  Alexander Heinemann ,  Enea Bianda ,  Franz Zurfluh ,  Gerold Knapp ,  Iulian Nistor ,  Richard Bloch

IPC: G01K7/00 ,  H01L21/66 ,  G01K7/01 ,  G01R31/26 ,  H03K17/18 ,  H03K17/08

CPC classification number: H01L22/30 ,  G01K7/01 ,  G01K2217/00 ,  G01R31/2619 ,  G01R31/2642 ,  H03K17/18 ,  H03K2017/0806

Abstract: A system and method are provided for monitoring in real time the operating state of an IGBT device, to determine a junction temperature and/or the remaining lifetime of an IGBT device. The system includes a differential unit configured to receive a gate-emitter voltage characteristic of the IGBT device to be measured and to differentiate the gate-emitter voltage characteristic to obtain pulses correlating with edges formed by a Miller plateau phase during a switch-off phase of the IGBT device. The system also includes a timer unit configured to measure the time delay between the obtained pulses indicating the start and end of the Miller plateau phase during the switch-off phase of the IGBT device, and a junction temperature calculation unit configured to determine at least one of the junction temperature of the IGBT device and/or the remaining lifetime of the IGBT device based on the measured time delay.

Abstract translation: 提供一种系统和方法，用于实时监测IGBT器件的工作状态，以确定IGBT器件的结温和/或剩余寿命。 该系统包括差分单元，其被配置为接收要测量的IGBT器件的栅极 - 发射极电压特性，并且区分栅 - 发射极电压特性，以在关断阶段期间获得与由Miller平台相形成的边缘相关的脉冲 IGBT器件。 该系统还包括定时器单元，其被配置为测量在IGBT器件的关断阶段期间指示米勒平台相开始和结束的获得的脉冲之间的时间延迟，以及结温计算单元，其被配置为确定至少一个 的IGBT器件的结温和/或IGBT器件的剩余寿命。