公开(公告)号：US12255552B2

公开(公告)日：2025-03-18

申请号：US17975527

申请日：2022-10-27

Applicant: ABB Schweiz AG

Inventor： Eddy C. Aeloiza ,  Yuxiang Shi ,  Goran Mandic ,  Weiqiang Chen

IPC: H02M7/539 ,  H02M1/00 ,  H02M7/48

Abstract: A method for an auxiliary device of an auxiliary resonant commutated pole inverter (ARCPI) to determine a boosting time of the ARCPI is provided. The auxiliary device includes an auxiliary switch path that uses a resonant inductor with at least one saturable inductor. The method includes: calculating, by a processor of the auxiliary device, a first boosting time in the auxiliary switch path based on a theoretical resonance inductance and a voltage that are applied to the resonant inductor; determining, by the processor, a second boosting time in the auxiliary switch path based on a look-up table; and determining, by the processor, the boosting time in the auxiliary switch path based on the first boosting time and the second boosting time. The method further includes controlling, by the processor, boosting current of the ARCPI based on the boosting time in the auxiliary switch path.

公开(公告)号：US11831251B2

公开(公告)日：2023-11-28

申请号：US17541784

申请日：2021-12-03

Applicant: ABB Schweiz AG

Inventor： Eddy C. Aeloiza ,  Sayan Acharya ,  Utkarsh Raheja

IPC: H02M7/5387 ,  H02P27/06

CPC classification number: H02M7/53875 ,  H02P27/06

Abstract: An insulated gate field effect transistor (IGFET) based converter circuit is described that includes a direct current input comprising a high voltage input and a low voltage input, an IGFET gate input, and an equivalent phase leg comprising a plurality of parallel-connected cells. The parallel-connected cells each include: a first wide bandgap IGFET having a first drain electrode connected to the high voltage input, a first gate electrode connected to a first gate control input, and a first source electrode; a second wide bandgap IGFET having a second drain electrode connected to the first source electrode, a second gate electrode connected to a second gate control input, and a second source electrode connected to the low voltage input; and a step-inducing inductor coupled to: the first source electrode of the first wide bandgap IGFET, and an output node. The step-inducing inductor is connected to the output node.

公开(公告)号：US20240146212A1

公开(公告)日：2024-05-02

申请号：US17975527

申请日：2022-10-27

Applicant: ABB Schweiz AG

Inventor： Eddy C. Aeloiza ,  Yuxiang Shi ,  Goran Mandic ,  Weiqiang Chen

IPC: H02M7/539 ,  H02M1/00 ,  H02M7/48

CPC classification number: H02M7/539 ,  H02M1/0012 ,  H02M7/4815

Abstract: A method for an auxiliary device of an auxiliary resonant commutated pole inverter (ARCPI) to determine a boosting time of the ARCPI is provided. The auxiliary device includes an auxiliary switch path that uses a resonant inductor with at least one saturable inductor. The method includes: calculating, by a processor of the auxiliary device, a first boosting time in the auxiliary switch path based on a theoretical resonance inductance and a voltage that are applied to the resonant inductor; determining, by the processor, a second boosting time in the auxiliary switch path based on a look-up table; and determining, by the processor, the boosting time in the auxiliary switch path based on the first boosting time and the second boosting time. The method further includes controlling, by the processor, boosting current of the ARCPI based on the boosting time in the auxiliary switch path.

公开(公告)号：US20250119069A1

公开(公告)日：2025-04-10

申请号：US18483088

申请日：2023-10-09

Applicant: ABB Schweiz AG

Inventor： Eddy C. Aeloiza ,  Goran Mandic ,  Weiqiang Chen

IPC: H02M7/5387 ,  H02M1/00 ,  H02M1/08 ,  H02M7/5395

Abstract: The present disclosure provides a method, control circuit, and non-transitory computer-readable medium for adjusting a boosting current of an auxiliary resonant commutated pole inverter (ARCPI). The method includes: (1) providing an input to trigger a first counter; (2) triggering a second counter based on determining that the first counter reaches a boosting time of the ARCPI; (3) stopping the second counter based on determining that a detection signal is received, and obtaining a time interval counted by the second counter; and (4) adjusting the boosting current based on determining that the time interval is equal to a sum of a first time and a blanking time.

公开(公告)号：US20230229220A1

公开(公告)日：2023-07-20

申请号：US17577891

申请日：2022-01-18

Applicant: ABB Schweiz AG

Inventor： Harish Suryanarayana ,  Goran Mandic ,  Eddy C. Aeloiza

IPC: G06F1/30 ,  G06F11/07

CPC classification number: G06F1/30 ,  G06F11/0793 ,  G06F11/0721

Abstract: A method for predicting power converter health is provided. The method comprises receiving a plurality of parameter measurements associated with a power converter system comprising a power converter. The plurality of parameter measurements comprises a first set of system measurements and a second set of failure precursor measurements. The method further comprises inputting the first set of system measurements into a first machine learning algorithm to generate expected failure precursor measurement information and inputting the expected failure precursor measurement information and the second set of failure precursor measurements into a second machine learning algorithm to generate component failure prediction information. The method also comprises performing one or more actions based on the generated component failure prediction information.

公开(公告)号：US20230179119A1

公开(公告)日：2023-06-08

申请号：US17541784

申请日：2021-12-03

Applicant: ABB Schweiz AG

Inventor： Eddy C. Aeloiza ,  Sayan Acharya ,  Utkarsh Raheja

IPC: H02M7/5387 ,  H02P27/06

CPC classification number: H02M7/53875 ,  H02P27/06

Abstract: An insulated gate field effect transistor (IGFET) based converter circuit is described that includes a direct current input comprising a high voltage input and a low voltage input, an IGFET gate input, and an equivalent phase leg comprising a plurality of parallel-connected cells. The parallel-connected cells each include: a first wide bandgap IGFET having a first drain electrode connected to the high voltage input, a first gate electrode connected to a first gate control input, and a first source electrode; a second wide bandgap IGFET having a second drain electrode connected to the first source electrode, a second gate electrode connected to a second gate control input, and a second source electrode connected to the low voltage input; and a step-inducing inductor coupled to: the first source electrode of the first wide bandgap IGFET, and an output node. The step-inducing inductor is connected to the output node.