公开(公告)号：US20170323801A1

公开(公告)日：2017-11-09

申请号：US15658124

申请日：2017-07-24

Applicant: ABB Schweiz AG

Inventor： Venkatesh Sivasubramaniam ,  David Guillon ,  Pauline Morin ,  Remi-Alain Guillemin ,  Samuel Hartmann

IPC: H01L21/48 ,  H01L23/498 ,  H01L23/373

CPC classification number: H01L21/4853 ,  H01L23/3735 ,  H01L23/49811 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present application relates to a method of generating a power semiconductor module including a carrier layer and a substrate having a terminal connection area, the method comprising: soldering the substrate to the carrier layer by forming a solder layer; wherein the solder layer is formed such, that a pre-defined cavity is provided in the solder layer adjacent to the substrate and located opposite to the terminal connection area; and welding a terminal to the terminal connection area of the substrate.The present application provides a method of generating a power semiconductor module which is especially cost-saving to perform and allows a reliable generation of high quality modules.