公开(公告)号：US20140079584A1

公开(公告)日：2014-03-20

申请号：US14092037

申请日：2013-11-27

Applicant: ABB Technology AG

Inventor： Reinhard SIMON ,  Dietmar GENTSCH

IPC: H01H33/664 ,  H01H1/02

CPC classification number: H01H33/664 ,  B22F1/0003 ,  B22F1/02 ,  C22C1/0425 ,  C22C9/00 ,  C22C27/06 ,  H01H1/0206 ,  H01H11/048 ,  H01H2033/66269 ,  Y10T428/2993 ,  Y10T428/2995

Abstract: Exemplary embodiments are directed to a contact material for a vacuum interrupter, and method of making the contact material. In achieving precise control of the Si concentration of Cu/Cr contact materials, the exemplary contact material has a chromium content which is above 10 wt. % and that the material is doped with silicon below 0.2 wt. % (2000 ppm Si) and the remainder is copper Cu.

Abstract translation: 示例性实施例涉及用于真空断路器的接触材料以及制造接触材料的方法。 为了精确控制Cu / Cr接触材料的Si浓度，示例性的接触材料的铬含量高于10wt。 并且该材料掺杂有低于0.2wt。的硅。 ％（2000ppm Si），其余为铜Cu。