公开(公告)号：US20150162738A1

公开(公告)日：2015-06-11

申请号：US14328848

申请日：2014-07-11

Applicant: ABB Technology AG

Inventor： Tobias Wikström ,  Thomas Setz

IPC: H02H3/02

CPC classification number: H02H3/023 ,  H01L25/072 ,  H01L25/18 ,  H01L2924/0002 ,  H02M7/49 ,  H01L2924/00

Abstract: A high-power semiconductor module is disclosed, which can include a high-power semiconductor device mounted on the module and at least two electrical connections. The module can include a short-circuit device mounted on the module. The short-circuit device can generate a persistent electrically conducting path between the two electrical connections upon receiving a trigger signal by electrically destroying a semiconductor of the high-power semiconductor module.

Abstract translation: 公开了一种高功率半导体模块，其可以包括安装在模块上的大功率半导体器件和至少两个电连接。 该模块可以包括安装在模块上的短路装置。 短路装置在通过电破坏大功率半导体模块的半导体而接收到触发信号时，可以在两个电连接之间产生持久的导电路径。

公开(公告)号：US09490621B2

公开(公告)日：2016-11-08

申请号：US14328848

申请日：2014-07-11

Applicant: ABB Technology AG

Inventor： Tobias Wikström ,  Thomas Setz

IPC: H01L23/62 ,  H02H3/02 ,  H01L25/07 ,  H01L25/18 ,  H02M7/49

CPC classification number: H02H3/023 ,  H01L25/072 ,  H01L25/18 ,  H01L2924/0002 ,  H02M7/49 ,  H01L2924/00

Abstract: A high-power semiconductor module is disclosed, which can include a high-power semiconductor device mounted on the module and at least two electrical connections. The module can include a short-circuit device mounted on the module. The short-circuit device can generate a persistent electrically conducting path between the two electrical connections upon receiving a trigger signal by electrically destroying a semiconductor of the high-power semiconductor module.

Abstract translation: 公开了一种高功率半导体模块，其可以包括安装在模块上的大功率半导体器件和至少两个电连接。 该模块可以包括安装在模块上的短路装置。 短路装置在通过电破坏大功率半导体模块的半导体而接收到触发信号时，可以在两个电连接之间产生持久的导电路径。