公开(公告)号：US20160013302A1

公开(公告)日：2016-01-14

申请号：US14748774

申请日：2015-06-24

Applicant: ABB Technology AG

Inventor： Munaf RAHIMO ,  Martin ARNOLD ,  Jan VOBECKY ,  Umamaheswara VEMULAPATI

IPC: H01L29/74 ,  H01L27/06

CPC classification number: H01L29/7416 ,  H01L27/0664 ,  H01L29/744

Abstract: A reverse-conducting power semiconductor device with a wafer has first and second main sides which are arranged opposite and parallel to each other. The device includes a plurality of diode cells and a plurality of gate commutated thyristors (GCT) cells. Each GCT cell includes layers of a first conductivity type (e.g., n-type) and a second conductivity type (e.g., p-type) between the first and second main sides. The device includes at least one mixed part in which diode anode layers of the diode cells alternate with first cathode layers of the GCT cells. In each diode cell, a diode buffer layer of the first conductivity type is arranged between the diode anode layer and a drift layer such that the diode buffer layer covers lateral sides of the diode anode layer from the first main side to a depth of approximately 90% of the thickness of the diode anode layer.

Abstract translation: 具有晶片的反向导通功率半导体器件具有彼此相对并平行布置的第一和第二主侧面。 该器件包括多个二极管单元和多个栅极换向晶闸管（GCT）单元。 每个GCT单元包括在第一和第二主侧之间的第一导电类型（例如，n型）和第二导电类型（例如，p型）的层。 该器件包括至少一个混合部分，其中二极管单元的二极管阳极层与GCT单元的第一阴极层交替。 在每个二极管单元中，第二导电类型的二极管缓冲层布置在二极管阳极层和漂移层之间，使得二极管缓冲层覆盖二极管阳极层的从第一主侧到大约90度的深度的侧面 二极管阳极层的厚度的百分比。