公开(公告)号：US09607924B2

公开(公告)日：2017-03-28

申请号：US14824871

申请日：2015-08-12

Applicant: ABB Technology Oy

Inventor： Daniel Kearney ,  Francesco Agostini ,  Didier Cottet ,  Daniele Torresin ,  Mathieu Habert

IPC: H01L23/34 ,  H01L23/473 ,  H01L23/538 ,  H05K1/02 ,  H01L23/31 ,  H05K1/18 ,  H05K3/46

CPC classification number: H01L23/473 ,  H01L23/3121 ,  H01L23/5389 ,  H01L2924/0002 ,  H05K1/0272 ,  H05K1/185 ,  H05K3/4697 ,  H05K2201/0116 ,  H05K2201/064 ,  H01L2924/00

Abstract: The present disclosure relates to a power semiconductor module comprising a printed circuit board (PCB), and to method of cooling such a power semiconductor module. The module comprises a power semiconductor device and an island of thermally conducting foam embedded into the printed circuit board. The power semiconductor device and the island of thermally conducting foam are positioned on top of each other, and the island is arranged to form a path for a flowing coolant cooling the power semiconductor device.

公开(公告)号：US20160049354A1

公开(公告)日：2016-02-18

申请号：US14824871

申请日：2015-08-12

Applicant: ABB Technology Oy

Inventor： Daniel Kearney ,  Francesco Agostini ,  Didier Cottet ,  Daniele Torresin ,  Mathieu Habert

IPC: H01L23/473 ,  H01L23/31

CPC classification number: H01L23/473 ,  H01L23/3121 ,  H01L23/5389 ,  H01L2924/0002 ,  H05K1/0272 ,  H05K1/185 ,  H05K3/4697 ,  H05K2201/0116 ,  H05K2201/064 ,  H01L2924/00

Abstract: The present disclosure relates to a power semiconductor module comprising a printed circuit board (PCB), and to method of cooling such a power semiconductor module. The module comprises a power semiconductor device and an island of thermally conducting foam embedded into the printed circuit board. The power semiconductor device and the island of thermally conducting foam are positioned on top of each other, and the island is arranged to form a path for a flowing coolant cooling the power semiconductor device.

Abstract translation: 本公开涉及一种包括印刷电路板（PCB）的功率半导体模块以及冷却这种功率半导体模块的方法。 该模块包括功率半导体器件和嵌入印刷电路板的导热泡沫岛。 功率半导体器件和导热泡沫岛位于彼此的顶部，岛被布置成形成冷却功率半导体器件的流动冷却剂的路径。