公开(公告)号：US3675220A

公开(公告)日：1972-07-04

申请号：US3675220D

申请日：1970-11-30

Applicant: ADVANCED PATENT TECHNOLOGY INC

Inventor： SNAPER ALVIN A ,  GREGORY GEORGE D ,  MUNROE MILES R

IPC: G11C11/22 ,  G11C13/04

CPC classification number: G11C13/047 ,  G11C11/22

Abstract: This memory device uses ferroelectric materials and it stores information as a change in the crystalline formation of the ferroelectric material. In turn, this change manifests itself as a change in the light intensity of polarized light incident upon the ferroelectric bits.

Abstract translation: 该存储装置使用铁电材料，并且将信息存储为铁电材料的结晶形成的变化。 反过来，这种变化表现为入射到铁电位上的偏振光的光强度的变化。