公开(公告)号：US3628852A

公开(公告)日：1971-12-21

申请号：US3628852D

申请日：1970-03-23

Applicant: ADVANCED PATENT TECHNOLOGY INC

Inventor： SNAPER ALVIN A ,  FARRELL FRANK C

IPC: F21V7/16 ,  F21V17/02 ,  G02B5/10

CPC classification number: F21V17/02 ,  F21V7/16 ,  G02B5/10

Abstract: A reflector assembly in accordance with the present disclosure comprises a deformable reflector mounted within a housing by an adjustablemounting means. The adjusting mounting means is capable of selectively adjusting the configuration and position of the reflector in the housing. Preferably, at least one region of the reflector is fixedly positioned with the housing and other regions of the reflector are independently selectively positioned in the housing to thereby selectively alter the configuration of the reflector.

公开(公告)号：US3628601A

公开(公告)日：1971-12-21

申请号：US3628601D

申请日：1970-03-23

Applicant: ADVANCED PATENT TECHNOLOGY INC

Inventor： SNAPER ALVIN A ,  FARRELL FRANK C

IPC: F21V29/505 ,  F21V29/00

CPC classification number: F21V29/505

Abstract: Apparatus in accordance with the present disclosure comprises housing defining a wall supporting a reflector also having a wall. A region is defined between the walls and manifolds are located at each end of the region. Nozzle means is in fluid communication with at least one of the manifolds for directing a jet stream of coolant into the region between the walls and tangentially to the wall being cooled to thereby cool the wall. The jet stream is collected and dispelled through a second manifold at the opposite end of the region. Vent apparatus may be provided adjacent the nozzles so that as the jet streams are emitted from the nozzles, air or coolant is drawn into the region to further cool the walls.

公开(公告)号：US3675220A

公开(公告)日：1972-07-04

申请号：US3675220D

申请日：1970-11-30

Applicant: ADVANCED PATENT TECHNOLOGY INC

Inventor： SNAPER ALVIN A ,  GREGORY GEORGE D ,  MUNROE MILES R

IPC: G11C11/22 ,  G11C13/04

CPC classification number: G11C13/047 ,  G11C11/22

Abstract: This memory device uses ferroelectric materials and it stores information as a change in the crystalline formation of the ferroelectric material. In turn, this change manifests itself as a change in the light intensity of polarized light incident upon the ferroelectric bits.

Abstract translation: 该存储装置使用铁电材料，并且将信息存储为铁电材料的结晶形成的变化。 反过来，这种变化表现为入射到铁电位上的偏振光的光强度的变化。