公开(公告)号：US11339089B2

公开(公告)日：2022-05-24

申请号：US16092395

申请日：2017-03-13

申请人： AGC GLASS EUROPE ,  AGC GLASS COMPANY NORTH AMERICA ,  AGC Inc. ,  QUERTECH INGENIERIE

发明人： Benjamine Navet ,  Pierre Boulanger ,  Denis Busardo

IPC分类号： C03C23/00 ,  C03C3/097 ,  C03C3/087 ,  B32B17/10 ,  B60J1/00 ,  C03C3/062 ,  C03C3/064 ,  C03C3/078 ,  C03C3/083 ,  C03C3/085 ,  C03C3/089 ,  C03C3/091 ,  C03C4/02 ,  C03C4/18 ,  C23C14/58 ,  C23C14/48

摘要： A method for manufacturing neutral color antireflective glass substrates by ion implantation, the method including ionizing a N2 source gas so as to form a mixture of single charge and multicharge ions of N, forming a beam of single charge and multicharge ions of N by accelerating with an acceleration voltage A between 20 kV and 25 kV and setting the ion dosage at a value between 6×1016 ions/cm2 and −5.00×1015×A/kV+2.00×1017 ions/cm2. A neutral color antireflective glass substrates including an area treated by ion implantation with a mixture of simple charge and multicharge ions according to the method.

公开(公告)号：US11066329B2

公开(公告)日：2021-07-20

申请号：US16092461

申请日：2017-03-13

申请人： AGC GLASS EUROPE ,  AGC GLASS COMPANY NORTH AMERICA ,  AGC Inc. ,  QUERTECH INGENIERIE

发明人： Benjamine Navet ,  Pierre Boulanger ,  Denis Busardo

IPC分类号： C03C23/00 ,  C03C3/087 ,  C03C3/091 ,  C03C3/097

摘要： A method for manufacturing antireflective glass substrates by ion implantation, comprising selecting a source gas of N2, or O2, ionizing the source gas so as to form a mixture of single charge and multicharge ions of N, or O, forming a beam of single charge and multicharge ions of N, or O by accelerating with an acceleration voltage A between 13 kV and 40 kV and setting the ion dosage at a value between 5.56×1014×A/kV+4.78×1016 ions/cm2 and −2.22×1016×A/kV+1.09×1018 ions/cm2, as well as antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.

公开(公告)号：US10703674B2

公开(公告)日：2020-07-07

申请号：US15520908

申请日：2015-10-21

申请人： AGC GLASS EUROPE ,  AGC Inc. ,  QUERTECH INGENIERIE

发明人： Benjamine Navet ,  Pierre Boulanger ,  Lionel Ventelon ,  Denis Busardo ,  Frederic Guernalec

IPC分类号： C23C14/48 ,  C03C23/00

摘要： The invention concerns a process for increasing the scratch resistance of a glass substrate by implantation of simple charge and multicharge ions, comprising maintaining the temperature of the area of the glass substrate being treated at a temperature that is less than or equal to the glass transition temperature of the glass substrate, selecting the ions to be implanted among the ions of Ar, He, and N, setting the acceleration voltage for the extraction of the ions at a value comprised between 5 kV and 200 kV and setting the ion dosage at a value comprised between 1014 ions/cm2 and 2.5×1017 ions/cm2.The invention further concerns glass substrates comprising an area treated by implantation of simple charge and multicharge ions according to this process and their use for reducing the probability of scratching on the glass substrate upon mechanical contact.