公开(公告)号：US20220093810A1

公开(公告)日：2022-03-24

申请号：US17413927

申请日：2019-12-16

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

Inventor： Steven LUKMAN ,  Jinghua TENG ,  Qing Yang Steve WU ,  Lu DING

IPC: H01L31/032 ,  H01L31/0336 ,  H01L33/00

Abstract: A device which detects and/or emits infrared radiation in the mid-infrared to far- infrared region is disclosed herein. The device comprises a first layer comprising a first transition metal dichalcogenide, and a second layer comprising a second transition metal dichalcogenide, wherein the second layer is deposited adjacent to the first layer to form a first interface which interlayer excitons are producible from for rendering the device operable to detect and/or emit infrared radiation in the mid-infrared to far-infrared region.

公开(公告)号：US20190025613A1

公开(公告)日：2019-01-24

申请号：US16040726

申请日：2018-07-20

Applicant: Agency for Science, Technology and Research

Inventor： Lu DING ,  Jinghua TENG

IPC: G02F1/017

Abstract: A semiconductor device includes a semiconductor substrate having a metasurface layer configured with multiple pairs of finger portions in a repeating arrangement. The multiple pairs of finger portions are electrically configurable to modulate a radiation signal received by the semiconductor device. Each pair of finger portions includes first and second members where the first member is doped with a first dopant and the second member is doped with a second dopant being different to the first dopant. Any two adjacent first or second members are configured to be separated by at least deep subwavelength to enable the repeating arrangement.