公开(公告)号：US09013838B1

公开(公告)日：2015-04-21

申请号：US14042955

申请日：2013-10-01

Applicant: Allegro Microsystems, LLC

Inventor： David G. Erie ,  Joseph Burkhardt ,  Steven Kosier

IPC: G11B5/33 ,  G01R33/00 ,  G01R33/09 ,  C23F1/12 ,  C23F1/14

CPC classification number: G01R33/0052 ,  C23F1/12 ,  C23F1/14 ,  G01R33/096 ,  G11B5/33 ,  Y10T29/4902

Abstract: Novel anisotropic magneto-resistive (AMR) sensor architectures and techniques for fabricating same are described. In at least one embodiment, an AMR sensor is provided that includes barber pole structures having upper and low metal layers that are formed of different materials. The metal material closer to the AMR element is formed of a material that can be etched using an etching process that does not attack the AMR material. In some other embodiments, AMR sensors having segmented AMR sensing elements are described.

Abstract translation: 描述了新型各向异性磁阻（AMR）传感器体系结构及其制造技术。 在至少一个实施例中，提供了AMR传感器，其包括具有由不同材料形成的上金属层和低金属层的理发杆结构。 靠近AMR元件的金属材料由可以使用不侵蚀AMR材料的蚀刻工艺进行蚀刻的材料形成。 在一些其他实施例中，描述了具有分段的AMR感测元件的AMR传感器。

公开(公告)号：US20150091559A1

公开(公告)日：2015-04-02

申请号：US14042955

申请日：2013-10-01

Applicant: ALLEGRO MICROSYSTEMS, LLC

Inventor： David G. Erie ,  Joseph Burkhardt ,  Steven Kosier

IPC: G01R33/00 ,  C23F1/12 ,  C23F1/14 ,  G01R33/09

CPC classification number: G01R33/0052 ,  C23F1/12 ,  C23F1/14 ,  G01R33/096 ,  G11B5/33 ,  Y10T29/4902

Abstract: Novel anisotropic magneto-resistive (AMR) sensor architectures and techniques for fabricating same are described. In at least one embodiment, an AMR sensor is provided that includes barber pole structures having upper and low metal layers that are formed of different materials. The metal material closer to the AMR element is formed of a material that can be etched using an etching process that does not attack the AMR material. In some other embodiments, AMR sensors having segmented AMR sensing elements are described.

Abstract translation: 描述了新型各向异性磁阻（AMR）传感器体系结构及其制造技术。 在至少一个实施例中，提供了AMR传感器，其包括具有由不同材料形成的上金属层和低金属层的理发杆结构。 靠近AMR元件的金属材料由可以使用不侵蚀AMR材料的蚀刻工艺进行蚀刻的材料形成。 在一些其他实施例中，描述了具有分段的AMR感测元件的AMR传感器。