公开(公告)号：US20150200355A1

公开(公告)日：2015-07-16

申请号：US14155992

申请日：2014-01-15

Applicant: Allegro Microsystems, LLC

Inventor： David G. Erie ,  Ruediger Held

IPC: H01L43/08 ,  H01L43/12 ,  H01L23/532 ,  H01L43/02 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L43/08 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53257 ,  H01L23/5329 ,  H01L43/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In one aspect, a method of fabricating a via in a hole of an isolation material includes depositing a first conductive material in the hole of the isolation material, removing a portion of the first conductive material deposited in the hole, depositing a second conductive material on the first conductive material in the hole and removing, using chemical-mechanical polishing (CMP), a portion of the second conductive material deposited on the first conductive material.

Abstract translation: 一方面，在隔离材料的孔中制造通孔的方法包括在隔离材料的孔中沉积第一导电材料，去除沉积在孔中的第一导电材料的一部分，将第二导电材料沉积在 孔中的第一导电材料，并且使用化学机械抛光（CMP）去除沉积在第一导电材料上的第二导电材料的一部分。

公开(公告)号：US20150091559A1

公开(公告)日：2015-04-02

申请号：US14042955

申请日：2013-10-01

Applicant: ALLEGRO MICROSYSTEMS, LLC

Inventor： David G. Erie ,  Joseph Burkhardt ,  Steven Kosier

IPC: G01R33/00 ,  C23F1/12 ,  C23F1/14 ,  G01R33/09

CPC classification number: G01R33/0052 ,  C23F1/12 ,  C23F1/14 ,  G01R33/096 ,  G11B5/33 ,  Y10T29/4902

Abstract: Novel anisotropic magneto-resistive (AMR) sensor architectures and techniques for fabricating same are described. In at least one embodiment, an AMR sensor is provided that includes barber pole structures having upper and low metal layers that are formed of different materials. The metal material closer to the AMR element is formed of a material that can be etched using an etching process that does not attack the AMR material. In some other embodiments, AMR sensors having segmented AMR sensing elements are described.

Abstract translation: 描述了新型各向异性磁阻（AMR）传感器体系结构及其制造技术。 在至少一个实施例中，提供了AMR传感器，其包括具有由不同材料形成的上金属层和低金属层的理发杆结构。 靠近AMR元件的金属材料由可以使用不侵蚀AMR材料的蚀刻工艺进行蚀刻的材料形成。 在一些其他实施例中，描述了具有分段的AMR感测元件的AMR传感器。

公开(公告)号：US09013838B1

公开(公告)日：2015-04-21

申请号：US14042955

申请日：2013-10-01

Applicant: Allegro Microsystems, LLC

Inventor： David G. Erie ,  Joseph Burkhardt ,  Steven Kosier

IPC: G11B5/33 ,  G01R33/00 ,  G01R33/09 ,  C23F1/12 ,  C23F1/14

CPC classification number: G01R33/0052 ,  C23F1/12 ,  C23F1/14 ,  G01R33/096 ,  G11B5/33 ,  Y10T29/4902

Abstract: Novel anisotropic magneto-resistive (AMR) sensor architectures and techniques for fabricating same are described. In at least one embodiment, an AMR sensor is provided that includes barber pole structures having upper and low metal layers that are formed of different materials. The metal material closer to the AMR element is formed of a material that can be etched using an etching process that does not attack the AMR material. In some other embodiments, AMR sensors having segmented AMR sensing elements are described.

Abstract translation: 描述了新型各向异性磁阻（AMR）传感器体系结构及其制造技术。 在至少一个实施例中，提供了AMR传感器，其包括具有由不同材料形成的上金属层和低金属层的理发杆结构。 靠近AMR元件的金属材料由可以使用不侵蚀AMR材料的蚀刻工艺进行蚀刻的材料形成。 在一些其他实施例中，描述了具有分段的AMR感测元件的AMR传感器。