OSCILLATION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING THE SAME
    1.
    发明申请
    OSCILLATION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING THE SAME 审中-公开
    振荡电路和包括其的半导体集成电路器件

    公开(公告)号:US20150244318A1

    公开(公告)日:2015-08-27

    申请号:US14603189

    申请日:2015-01-22

    CPC classification number: H03B5/364

    Abstract: When an external clock signal exceeding a power supply voltage is input to a first terminal, a voltage of a bulk of a P type MOS transistor becomes higher than a power supply voltage, but a current does not flow from the bulk of the P type MOS transistor to a first power supply line since a first diode is provided in a forward direction with respect to a direction of a current flowing from a first power supply line to the bulk of the P type MOS transistor. Therefore, it is possible to reliably prevent a reverse current from flowing from the first terminal to the first power supply line.

    Abstract translation: 当超过电源电压的外部时钟信号被输入到第一端子时,P型MOS晶体管的体积的电压变得高于电源电压,但是电流不从P型MOS的大部分流出 由于第一二极管相对于从第一电源线流向P型MOS晶体管的主体的电流的方向在正向方向上被提供,所以是第一电源线。 因此,可以可靠地防止反向电流从第一端子流到第一电源线。

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