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公开(公告)号：US20230215864A1
公开(公告)日：2023-07-06
申请号：US17646735
申请日：2022-01-03
发明人： Tun-Chih YANG , Zi-Ping CHEN , Kun-Hsien LIN
IPC分类号： H01L27/02
CPC分类号： H01L27/0292 , H01L27/0255 , H01L27/0259
摘要： A bidirectional electrostatic discharge protection device includes a first transient voltage suppressor chip, a second transient voltage suppressor chip, a first conductive wire, and a second conductive wire. The first transient voltage suppressor chip includes a first diode and a first bipolar junction transistor. The first diode and the first bipolar junction transistor are electrically connected to a first pin. The second transient voltage suppressor chip includes a second diode and a second bipolar junction transistor. The second diode and the second bipolar junction transistor are electrically connected to a second pin. The first conductive wire is electrically connected between the first diode and the second bipolar junction transistor. The second conductive wire is electrically connected between the second diode and the first bipolar junction transistor.
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公开(公告)号：US20230010423A1
公开(公告)日：2023-01-12
申请号：US17368269
申请日：2021-07-06
发明人： Tun-Chih YANG , Zi-Ping CHEN , Kun-Hsien LIN
IPC分类号： H01L27/02
摘要： A multi-channel transient voltage suppression device includes a semiconductor substrate, a semiconductor layer, at least two bidirectional transient voltage suppression structures, and at least one isolation trench. The semiconductor substrate, having a first conductivity type, is coupled to a grounding terminal. The semiconductor layer, having a second conductivity type opposite to the first conductivity type, is formed on the semiconductor substrate. The bidirectional transient voltage suppression structures are formed in the semiconductor layer. Each bidirectional transient voltage suppression structure is coupled to an input/output (I/O) pin and the grounding terminal. The isolation trench is formed in the semiconductor substrate and the semiconductor layer and formed between the bidirectional transient voltage suppression structures. The isolation trench has a height larger than the height of the semiconductor layer and surrounds the bidirectional transient voltage suppression structures.
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