公开(公告)号：US20150194511A1

公开(公告)日：2015-07-09

申请号：US14662417

申请日：2015-03-19

申请人： AMAZING MICROELECTRONIC CORP.

发明人： Tung-Yang CHEN ,  James Jeng-Jie PENG ,  Woei-Lin WU ,  Ryan Hsin-Chin JIANG

IPC分类号： H01L29/747

CPC分类号： H01L29/747 ,  H01L27/0262 ,  H01L29/7436 ,  H01L29/861

摘要： A silicon-controlled rectification device with high efficiency is disclosed, which comprises a P-type region surrounding an N-type region. A first P-type heavily doped area is arranged in the N-type region and connected with a high-voltage terminal. A plurality of second N-type heavily doped areas is arranged in the N-type region. A plurality of second P-type heavily doped areas is closer to the second N-type heavily doped areas than the first N-type heavily doped area and arranged in the P-type region. At least one third N-type heavily doped area is arranged in the P-type region and connected with a low-voltage terminal.Alternatively or in combination, the second N-type heavily doped areas and the second P-type heavily doped areas are respectively arranged in the P-type region and the N-type region.

摘要翻译： 公开了一种高效率的硅控整流装置，其包括围绕N型区域的P型区域。 第一P型重掺杂区域布置在N型区域中并与高压端子连接。 在N型区域中布置有多个第二N型重掺杂区域。 多个第二P型重掺杂区域比第一N型重掺杂区域更靠近第二N型重掺杂区域并且布置在P型区域中。 在P型区域中设置至少一个第三N型重掺杂区域，并与低电压端子连接。 或者或组合地，第二N型重掺杂区域和第二P型重掺杂区域分别布置在P型区域和N型区域中。