公开(公告)号：US20160179009A1

公开(公告)日：2016-06-23

申请号：US14910670

申请日：2014-07-25

Applicant: AMS AG

Inventor： Gerhard EILMSTEINER ,  Raimund HOFFMANN

IPC: G03F7/32 ,  G03F7/20

CPC classification number: G03F7/2022 ,  G03F1/50 ,  G03F1/54 ,  G03F7/168 ,  G03F7/20 ,  G03F7/32

Abstract: The method comprises the steps of applying a layer of a negative photoresist on a bottom layer, providing the layer of the negative photoresist with a pattern arranged in a border zone of the resist structure to be produced, irradiating a surface area of the layer of the negative photoresist according to the resist structure to be produced, and removing the layer of the negative photoresist outside the irradiated surface area. The pattern is produced in such a manner that it comprises a dimension that is smaller than a minimal resolution of the irradiation. The pattern may especially be designed as a sub-resolution assist feature.

Abstract translation: 该方法包括以下步骤：在底层上施加负性光致抗蚀剂层，为负光致抗蚀剂层提供布置在要制备的抗蚀剂结构的边界区域中的图案，照射所述层的 根据要制造的抗蚀剂结构的负性光致抗蚀剂，以及去除在照射的表面区域外的负性光致抗蚀剂层。 以这样的方式产生图案，使得其包括小于照射的最小分辨率的尺寸。 该图案可以特别地被设计为子分辨率辅助特征。