公开(公告)号：US11289329B2

公开(公告)日：2022-03-29

申请号：US16752630

申请日：2020-01-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Rui Li ,  Xiangjin Xie ,  Fuhong Zhang ,  Shirish Pethe ,  Adolph Allen ,  Lanlan Zhong ,  Xianmin Tang

IPC: H01L21/02 ,  H01L21/768 ,  C23C14/34 ,  C23C18/38

Abstract: Methods and apparatus for method for filling a feature with copper. In some embodiments, the methods include: (a) depositing a first cobalt layer via a physical vapor deposition (PVD) process atop a substrate field and atop a sidewall and a bottom surface of a feature disposed in a substrate to form a first cobalt portion atop the substrate field and a second cobalt portion atop the sidewall; (b) depositing copper atop the first cobalt portion atop the substrate field; and (c) flowing the copper disposed atop the first cobalt portion atop the substrate field over the second cobalt portion and into the feature, wherein the first cobalt portion atop the substrate field reduces the mobility of copper compared to the mobility of copper over the second cobalt portion.