公开(公告)号：US20190051596A1

公开(公告)日：2019-02-14

申请号：US15673478

申请日：2017-08-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Peng Suo ,  Yu Gu ,  Guan Huei See ,  Arvind Sundarajan

IPC: H01L23/522 ,  H01L21/768 ,  H01L21/027 ,  H01L21/02 ,  H01L21/283 ,  H01L23/528 ,  H01L21/3105 ,  H01L49/02

Abstract: Methods of processing a substrate include providing a substrate having a polymer dielectric layer and a metal layer formed atop the polymer dielectric layer; depositing a plurality of polymer layers atop the substrate; patterning the plurality of polymer layers to form at least one via that extends from a top surface of an uppermost polymer layer to a top surface of the metal layer; and forming a three-dimensional metal-insulator-metal (3D MIM) capacitance stack in the at least one via and over a portion of the metal layer and the plurality of polymer layers.