公开(公告)号：US20200051795A1

公开(公告)日：2020-02-13

申请号：US16285043

申请日：2019-02-25

Applicant: APPLIED MATERIALS, INC.

Inventor： CHAO DU ,  YONG CAO ,  CHEN GONG ,  MINGDONG LI ,  FUHONG ZHANG ,  RONGJUN WANG ,  XIANMIN TANG

IPC: H01J37/34 ,  C23C14/34 ,  H01J37/32

Abstract: Embodiments of a process chamber are provided herein. In some embodiments, a process chamber includes a chamber body having an interior volume, a substrate support disposed in the interior volume, a target disposed within the interior volume and opposing the substrate support, a process shield disposed in the interior volume and having an upper portion surrounding the target and a lower portion surrounding the substrate support, the upper portion having an inner diameter that is greater than an outer diameter of the target to define a gap between the process shield and the target, and a gas inlet to provide a gas to the interior volume through the gap or across a front opening of the gap to substantially prevent particles from the interior volume from entering the gap during use.

公开(公告)号：US20190292651A1

公开(公告)日：2019-09-26

申请号：US16358465

申请日：2019-03-19

Applicant: APPLIED MATERIALS, INC.

Inventor： RONGJUN WANG ,  XIAODONG WANG ,  CHAO DU

IPC: C23C14/14 ,  C23C14/34

Abstract: Methods for depositing a dielectric oxide layer atop one or more substrates disposed in or processed through a PVD chamber are provided herein. In some embodiments, such a method includes: sputtering source material from a target assembly onto a first substrate while the source material is at a first erosion state and while providing a first amount of RF power to the target assembly to deposit a dielectric oxide layer onto a first substrate having a desired resistance-area; and subsequently sputtering source material from the target assembly onto a second substrate while the source material is at a second erosion state and while providing a second amount of RF power to the target assembly, wherein the second amount of RF power is lower than the first amount of RF power by a predetermined amount calculated to maintain the desired resistance-area.