公开(公告)号：US20200051795A1

公开(公告)日：2020-02-13

申请号：US16285043

申请日：2019-02-25

Applicant: APPLIED MATERIALS, INC.

Inventor： CHAO DU ,  YONG CAO ,  CHEN GONG ,  MINGDONG LI ,  FUHONG ZHANG ,  RONGJUN WANG ,  XIANMIN TANG

IPC: H01J37/34 ,  C23C14/34 ,  H01J37/32

Abstract: Embodiments of a process chamber are provided herein. In some embodiments, a process chamber includes a chamber body having an interior volume, a substrate support disposed in the interior volume, a target disposed within the interior volume and opposing the substrate support, a process shield disposed in the interior volume and having an upper portion surrounding the target and a lower portion surrounding the substrate support, the upper portion having an inner diameter that is greater than an outer diameter of the target to define a gap between the process shield and the target, and a gas inlet to provide a gas to the interior volume through the gap or across a front opening of the gap to substantially prevent particles from the interior volume from entering the gap during use.

公开(公告)号：US20180151337A1

公开(公告)日：2018-05-31

申请号：US15818169

申请日：2017-11-20

Applicant: APPLIED MATERIALS, INC.

Inventor： THANH X. NGUYEN ,  WEIMIN ZENG ,  YONG CAO

IPC: H01J37/34 ,  H01L21/02

CPC classification number: H01J37/3441 ,  H01J37/3438 ,  H01J37/3488 ,  H01L21/02266

Abstract: Embodiments of process kits for process chambers and methods for processing a substrate are provided herein. In some embodiments, a process kit includes a non-conductive upper shield having an upper portion to surround a sputtering target and a lower portion extending downward from the upper portion; and a conductive lower shield disposed radially outward of the non-conductive upper shield and having a cylindrical body with an upper portion and a lower portion, a lower wall projecting radially inward from the lower portion, and a lip protruding upward from the lower wall. The cylindrical body is spaced apart from the non-conductive upper shield by a first gap. The lower wall is spaced apart from the lower portion of the non-conductive upper shield by a second gap to limit a direct line of sight between a volume within the non-conductive upper shield and the cylindrical body of the conductive lower shield.

公开(公告)号：US20180011331A1

公开(公告)日：2018-01-11

申请号：US15687827

申请日：2017-08-28

Applicant: APPLIED MATERIALS, INC.

Inventor： DANIEL LEE DIEHL ,  YONG CAO ,  MINGWEI ZHU ,  TAI-CHOU PAPO CHEN

IPC: G02B27/10 ,  G02B5/28 ,  C23C14/06

CPC classification number: G02B27/1013 ,  C23C14/0676 ,  G02B5/285

Abstract: Light wave separation lattices and methods of formation are provided herein. In some embodiments, a light wave separation lattice includes a first layer having the formula ROxNy, wherein the first layer has a first refractive index; and a second layer, different from the first layer, disposed atop the first layer, and having the formula R′OxNy, wherein the second layer has a second refractive index different from the first refractive index, and wherein R and R′ are each one of a metal or a dielectric material. In some embodiments, a method of forming a light wave separation lattice includes depositing a first layer having a predetermined desired refractive index atop a substrate by a physical vapor deposition process; and depositing a second layer, different from the first layer, atop the first layer, wherein the second layer has a predetermined second refractive index different from the first refractive index.

公开(公告)号：US20190189407A1

公开(公告)日：2019-06-20

申请号：US16215769

申请日：2018-12-11

Applicant: APPLIED MATERIALS, INC.

Inventor： THANH X. NGUYEN ,  ALEXANDER JANSEN ,  YANA CHENG ,  RANDAL SCHMIEDING ,  YONG CAO ,  XIANMIN TANG ,  WILLIAM JOHANSON

IPC: H01J37/34 ,  C23C14/54 ,  C23C14/34

CPC classification number: H01J37/347 ,  C23C14/34 ,  C23C14/545

Abstract: A movable substrate support with a top surface for holding a substrate, when present, is used in conjunction with a cover ring that is stationary to adjust for a shadow effect to control substrate edge uniformity during deposition processes. The cover ring is held stationary by an electrically isolated spacer that engages with a grounded shield in the process volume of a semiconductor process chamber. A controller adjusts the substrate support in response to deposition material on a top surface of the cover ring to maintain the shadow effect and substrate edge uniformity.

公开(公告)号：US20130199925A1

公开(公告)日：2013-08-08

申请号：US13750318

申请日：2013-01-25

Applicant: APPLIED MATERIALS, INC.

Inventor： YONG CAO ,  XIANMIN TANG ,  ADOLPH MILLER ALLEN ,  TZA-JING GUNG

IPC: C23C14/34

CPC classification number: C23C14/345 ,  C23C14/351 ,  C23C14/54 ,  H01J37/34

Abstract: Methods for depositing a layer on a substrate are provided herein. In some embodiments, a method of depositing a metal-containing layer on a substrate in a physical vapor deposition (PVD) chamber may include applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; optionally applying DC power to the target; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling the potential on the substrate to be the same polarity as the ionized metal atoms to deposit a metal-containing layer on the substrate.

Abstract translation: 本文提供了在基板上沉积层的方法。 在一些实施例中，在物理气相沉积（PVD）室中在衬底上沉积含金属层的方法可以包括以VHF频率将RF功率施加到包括设置在衬底上方的PVD室中的金属的靶，以形成 来自等离子体形成气体的等离子体; 可选地向目标施加DC电力; 使用等离子体从靶中溅射金属原子，同时保持PVD室中的第一压力足以离子化主要部分的溅射金属原子; 并且将基板上的电位控制为与电离金属原子相同的极性，以在基板上沉积含金属层。

公开(公告)号：US20160240483A1

公开(公告)日：2016-08-18

申请号：US15041454

申请日：2016-02-11

Applicant: APPLIED MATERIALS, INC.

Inventor： YANA CHENG ,  YONG CAO ,  SRINIVAS GUGGILLA ,  SREE RANGASAI KESAPRAGADA ,  XIANMIN TANG ,  DEENESH PADHI

IPC: H01L23/532 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L23/53238 ,  C23C14/0036 ,  C23C14/0676 ,  C23C14/352 ,  H01J37/32504 ,  H01J37/3408 ,  H01J37/3455 ,  H01L21/02145 ,  H01L21/02266 ,  H01L21/76802 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/53223 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295

Abstract: Interconnect structures and methods of formation of such interconnect structures are provided herein. In some embodiments, a method of forming an interconnect includes: depositing a silicon-aluminum oxynitride (SiAlON) layer atop a first layer of a substrate, wherein the first layer comprises a first feature filled with a first conductive material; depositing a dielectric layer over the silicon-aluminum oxynitride (SiAlON) layer; and forming a second feature in the dielectric layer and the silicon-aluminum oxynitride (SiAlON) layer to expose the first conductive material.

Abstract translation: 本文提供互连结构和形成这种互连结构的方法。 在一些实施例中，形成互连的方法包括：在衬底的第一层的顶部沉积硅 - 铝氮氧化物（SiAlON）层，其中第一层包括填充有第一导电材料的第一特征; 在硅 - 铝氮氧化物（SiAlON）层上沉积介电层; 以及在介电层和硅铝氧氮化物（SiAlON）层中形成第二特征以暴露第一导电材料。

公开(公告)号：US20190341248A1

公开(公告)日：2019-11-07

申请号：US16400850

申请日：2019-05-01

Applicant: APPLIED MATERIALS, INC.

Inventor： WEIMIN ZENG ,  YONG CAO

IPC: H01L21/02

Abstract: The present disclosure generally relates to tin oxide films prepared by physical vapor deposition using a doped tin target. The semiconductor film may include tin and oxygen, and may be formed in a PVD chamber including a silicon doped tin target. Additionally, the semiconductor film may be smooth compared to similarly formed films without a doped target. The semiconductor film may be deposited by applying an electrical bias to a sputtering silicon doped tin target including the silicon in an amount of 0.5 to 5% by atomic weight of the total target. The semiconductor film has a smooth surface morphology compared to similarly formed tin oxide films formed without a doped target.

公开(公告)号：US20150293363A1

公开(公告)日：2015-10-15

申请号：US14291712

申请日：2014-05-30

Applicant: APPLIED MATERIALS, INC.

Inventor： DANIEL LEE DIEHL ,  YONG CAO ,  MINGWEI ZHU ,  TAI-CHOU PAPO CHEN

IPC: G02B27/10 ,  C23C14/06 ,  G02B5/28

CPC classification number: G02B27/1013 ,  C23C14/0676 ,  G02B5/285

Abstract: Light wave separation lattices and methods of formation are provided herein. In some embodiments, a light wave separation lattice includes a first layer having the formula ROXNY, wherein the first layer has a first refractive index; and a second layer, different from the first layer, disposed atop the first layer, and having the formula R′OXNY, wherein the second layer has a second refractive index different from the first refractive index, and wherein R and R′ are each one of a metal or a dielectric material. In some embodiments, a method of forming a light wave separation lattice includes depositing a first layer having a predetermined desired refractive index atop a substrate by a physical vapor deposition process; and depositing a second layer, different from the first layer, atop the first layer, wherein the second layer has a predetermined second refractive index different from the first refractive index.

Abstract translation: 本文提供光波分离晶格和形成方法。 在一些实施例中，光波分离晶格包括具有式ROXNY的第一层，其中第一层具有第一折射率; 和与第一层不同的第二层，设置在第一层上，并具有式R'OXNY，其中第二层具有不同于第一折射率的第二折射率，并且其中R和R'各自为一个 的金属或介电材料。 在一些实施例中，形成光波分离晶格的方法包括通过物理气相沉积工艺沉积具有预定折射率的第一层; 以及在所述第一层的顶部上沉积与所述第一层不同的第二层，其中所述第二层具有与所述第一折射率不同的预定的第二折射率。