公开(公告)号：US20220359209A1

公开(公告)日：2022-11-10

申请号：US17869496

申请日：2022-07-20

Applicant: APPLIED MATERIALS, INC.

Inventor： TAKASHI KURATOMI ,  I-CHENG CHEN ,  AVGERINOS V. GELATOS ,  PINGYAN LEI ,  MEI CHANG ,  XIANMIN TANG

IPC: H01L21/285 ,  H01J37/32 ,  C23C16/42

Abstract: Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl4), hydrogen (H2) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees C.; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.

公开(公告)号：US20200211852A1

公开(公告)日：2020-07-02

申请号：US16705119

申请日：2019-12-05

Applicant: APPLIED MATERIALS, INC.

Inventor： TAKASHI KURATOMI ,  I-CHENG CHEN ,  AVGERINOS V. GELATOS ,  PINGYAN LEI ,  MEI CHANG ,  XIANMIN TANG

IPC: H01L21/285 ,  H01J37/32 ,  C23C16/42

Abstract: Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl4), hydrogen (H2) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees Celsius; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.