公开(公告)号：US20190382895A1

公开(公告)日：2019-12-19

申请号：US16520646

申请日：2019-07-24

Applicant: APPLIED MATERIALS, INC.

Inventor： XIAOXIONG YUAN ,  YU LEI ,  YI XU ,  KAZUYA DAITO ,  PINGYAN LEI ,  DIEN-YEH WU ,  UMESH M. KELKAR ,  VIKASH BANTHIA

IPC: C23C16/455

Abstract: Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.

公开(公告)号：US20180347043A1

公开(公告)日：2018-12-06

申请号：US15663734

申请日：2017-07-29

Applicant: APPLIED MATERIALS, INC.

Inventor： XIAOXIONG YUAN ,  YU LEI ,  YI XU ,  KAZUYA DAITO ,  PINGYAN LEI ,  DIEN-YEH WU ,  UMESH M. KELKAR ,  VIKASH BANTHIA

IPC: C23C16/455

CPC classification number: C23C16/45544 ,  C23C16/45508 ,  C23C16/45536 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/67017

Abstract: Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.

公开(公告)号：US20220359209A1

公开(公告)日：2022-11-10

申请号：US17869496

申请日：2022-07-20

Applicant: APPLIED MATERIALS, INC.

Inventor： TAKASHI KURATOMI ,  I-CHENG CHEN ,  AVGERINOS V. GELATOS ,  PINGYAN LEI ,  MEI CHANG ,  XIANMIN TANG

IPC: H01L21/285 ,  H01J37/32 ,  C23C16/42

Abstract: Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl4), hydrogen (H2) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees C.; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.

公开(公告)号：US20200211852A1

公开(公告)日：2020-07-02

申请号：US16705119

申请日：2019-12-05

Applicant: APPLIED MATERIALS, INC.

Inventor： TAKASHI KURATOMI ,  I-CHENG CHEN ,  AVGERINOS V. GELATOS ,  PINGYAN LEI ,  MEI CHANG ,  XIANMIN TANG

IPC: H01L21/285 ,  H01J37/32 ,  C23C16/42

Abstract: Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl4), hydrogen (H2) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees Celsius; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.