公开(公告)号：US20190157102A1

公开(公告)日：2019-05-23

申请号：US16196056

申请日：2018-11-20

Applicant: APPLIED MATERIALS, INC.

Inventor： GUOQIANG JIAN ,  WEI TANG ,  CHI-CHOU LIN ,  PAUL F. MA ,  KAI WU ,  VIKASH BANTHIA ,  MEI CHANG ,  JIA YE ,  WENYU ZHANG ,  JING ZHOU

IPC: H01L21/321 ,  H01L21/768 ,  H01L21/285

Abstract: Methods and apparatus for reducing and eliminating defects in tungsten film are disclosed herein. In the present disclosure, reducing or eliminating oxidation of a first surface of a tungsten film having a predetermined first thickness disposed upon a substrate and within a plurality of trenches is disclosed. The plurality of trenches include a predetermined depth, and a width of less than 20 nanometers. The predetermined first thickness of the tungsten film is substantially uniform throughout the plurality of trenches such that the predetermined first thickness of the tungsten film does not substantially change to a second thickness when the first surface is contacted with air or oxygen.