公开(公告)号：US20210391146A1

公开(公告)日：2021-12-16

申请号：US16899326

申请日：2020-06-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Timothy Joseph FRANKLIN ,  Rajinder DHINDSA ,  Daniel Sang BYUN ,  Carlaton WONG ,  Joseph PERRY ,  James Hugh ROGERS

IPC: H01J37/32 ,  H01L21/67

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of processing a substrate in an etch process chamber includes: pulsing RF power from an RF bias power supply to a lower electrode disposed in a substrate support of the etch process chamber at a first frequency of about 200 kHz to about 700 kHz over a first period to create a plasma in a process volume of the etch process chamber, wherein a conductance liner surrounds the process volume to provide a ground path for an upper electrode of the etch process chamber; and pulsing RF power from the RF bias power supply to the lower electrode at a second frequency of about 2 MHz to about 13.56 MHz over the first period.