公开(公告)号：US20210140029A1

公开(公告)日：2021-05-13

申请号：US16677891

申请日：2019-11-08

Applicant: APPLIED MATERIALS, INC.

Inventor： YUEH SHENG OW ,  YUICHI WADA ,  JUNQI WEI ,  KANG ZHANG ,  KELVIN BOH

IPC: C23C14/02 ,  H01L23/00 ,  C23C14/16 ,  H01J37/32 ,  H01J37/34

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate can includes selectively etching from a substrate disposed in the PVD chamber an exposed first layer of material, covering an underlying second layer of material, and adjacent to an exposed third layer of material, using both process gas ions and metal ions formed from a target of the PVD chamber, in an amount sufficient to expose the second layer of material while simultaneously depositing a layer of metal onto the third layer of material; and subsequently depositing metal from the target onto the second layer of material.