公开(公告)号：US20190338415A1

公开(公告)日：2019-11-07

申请号：US16398782

申请日：2019-04-30

Applicant: APPLIED MATERIALS, INC.

Inventor： JACQUELINE WRENCH ,  LIQI WU ,  HSIANG NING WU ,  PAUL MA ,  SANG-HO YU ,  FUQUN GRACE VASIKNANONTE ,  NOBUYUKI SASAKI

IPC: C23C16/12 ,  H01L21/02

Abstract: Methods and apparatus for increasing reflectivity of an aluminum layer on a substrate. In some embodiments, a method of depositing an aluminum layer on a substrate comprises depositing a layer of cobalt or cobalt alloy or a layer of titanium or titanium alloy on the substrate with a chemical vapor deposition (CVD) process, pre-treating the layer of cobalt or cobalt alloy with a thermal hydrogen anneal at a temperature of approximately 400 degrees Celsius if a top surface of the layer of cobalt or cobalt alloy is compromised, and depositing a layer of aluminum on the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy with a CVD process at a temperature of approximately 120 degrees Celsius. Pre-treatment of the layer of cobalt or cobalt alloy may be accomplished for a duration of approximately 60 seconds to approximately 120 seconds.

公开(公告)号：US20200343136A1

公开(公告)日：2020-10-29

申请号：US16396744

申请日：2019-04-28

Applicant: APPLIED MATERIALS, INC.

Inventor： SANG-HO YU ,  SESHADRI GANGULI

IPC: H01L21/768 ,  H01L23/522 ,  H01L21/02 ,  H01L21/285

Abstract: Methods and apparatus for filling a high aspect ratio feature such as a via with ruthenium including: contacting a ruthenium liner with a ruthenium precursor within a high aspect ratio feature such as a via, wherein the ruthenium liner has a top surface within a high aspect ratio feature such as a via, and wherein the top surface comprises a halogen material such as iodine or bromine. Embodiments also relate to selective deposition of ruthenium within a high-aspect ratio feature such as a via.