公开(公告)号：US20190338415A1

公开(公告)日：2019-11-07

申请号：US16398782

申请日：2019-04-30

Applicant: APPLIED MATERIALS, INC.

Inventor： JACQUELINE WRENCH ,  LIQI WU ,  HSIANG NING WU ,  PAUL MA ,  SANG-HO YU ,  FUQUN GRACE VASIKNANONTE ,  NOBUYUKI SASAKI

IPC: C23C16/12 ,  H01L21/02

Abstract: Methods and apparatus for increasing reflectivity of an aluminum layer on a substrate. In some embodiments, a method of depositing an aluminum layer on a substrate comprises depositing a layer of cobalt or cobalt alloy or a layer of titanium or titanium alloy on the substrate with a chemical vapor deposition (CVD) process, pre-treating the layer of cobalt or cobalt alloy with a thermal hydrogen anneal at a temperature of approximately 400 degrees Celsius if a top surface of the layer of cobalt or cobalt alloy is compromised, and depositing a layer of aluminum on the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy with a CVD process at a temperature of approximately 120 degrees Celsius. Pre-treatment of the layer of cobalt or cobalt alloy may be accomplished for a duration of approximately 60 seconds to approximately 120 seconds.

公开(公告)号：US20150294906A1

公开(公告)日：2015-10-15

申请号：US14300773

申请日：2014-06-10

Applicant: APPLIED MATERIALS, INC.

Inventor： LIQI WU ,  SANG HO YU ,  KAZUYA DAITO ,  KIE JIN PARK ,  KAI WU ,  DAVID THOMPSON

IPC: H01L21/768

CPC classification number: H01L21/76877 ,  C23C16/045 ,  C23C16/06 ,  C23C16/45536 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876

Abstract: Methods for forming metal organic tungsten for middle-of-the-line (MOL) applications are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate to a process chamber, wherein the substrate includes a feature formed in a first surface of a dielectric layer of the substrate; exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten barrier layer atop the dielectric layer and within the feature, wherein a temperature of the process chamber during formation of the tungsten barrier layer is less than about 225 degrees Celsius; and depositing a tungsten fill layer over the tungsten barrier layer to fill the feature to the first surface.

Abstract translation: 本文提供了用于生产中间线（MOL）应用的金属有机钨的方法。 在一些实施例中，处理衬底的方法包括向处理室提供衬底，其中衬底包括形成在衬底的电介质层的第一表面中的特征; 将衬底暴露于由包括金属有机钨前体的第一气体形成的等离子体，以在该介电层的顶部和特征内形成钨阻挡层，其中在形成钨阻挡层期间处理室的温度小于约 225摄氏度; 以及在所述钨阻挡层上沉积钨填充层以将所述特征填充到所述第一表面。

公开(公告)号：US20190326114A1

公开(公告)日：2019-10-24

申请号：US16381755

申请日：2019-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： JESSICA S. KACHIAN ,  JUKKA TANSKANEN ,  WENYU ZHANG ,  MICHAEL S. JACKSON ,  CHANG KE ,  LIQI WU

IPC: H01L21/02 ,  C23C16/458

Abstract: Methods for treating a substrate including: contacting a substrate having a top surface with a first self-assembled monolayer (SAM) precursor or a first small-molecule monolayer (SMM) precursor, a co-reactant, and a second SAM precursor or a second SMM precursor to form a first layer on the top surface. Selective deposition methods are also disclosed.

公开(公告)号：US20200048762A1

公开(公告)日：2020-02-13

申请号：US16535499

申请日：2019-08-08

Applicant: APPLIED MATERIALS, INC.

Inventor： CHANG KE ,  WENYU ZHANG ,  LIQI WU

IPC: C23C16/18 ,  C23C16/08 ,  C23C16/455 ,  C23C16/02 ,  C23C16/04

Abstract: Methods and apparatus for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface is disclosed, including: (a) contacting the metal surface with one or more metal halides such as metal chlorides or metal fluorides to form an exposed metal surface; (b) growing an organosilane based self-assembled monolayer atop the dielectric surface; and (c) selectively depositing a layer atop the exposed metal surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the layer atop the dielectric surface.