POWER DEPOSITION CONTROL IN INDUCTIVELY COUPLED PLASMA (ICP) REACTORS
    1.
    发明申请
    POWER DEPOSITION CONTROL IN INDUCTIVELY COUPLED PLASMA (ICP) REACTORS 审中-公开
    感应耦合等离子体(ICP)反应器中的功率沉积控制

    公开(公告)号:US20150068682A1

    公开(公告)日:2015-03-12

    申请号:US14463205

    申请日:2014-08-19

    Abstract: Embodiments of inductively coupled plasma (ICP) reactors are provided herein. In some embodiments, a dielectric window for an inductively coupled plasma reactor includes: a body including a first side, a second side opposite the first side, an edge, and a center, wherein the dielectric window has a dielectric coefficient that varies spatially. In some embodiments, an apparatus for processing a substrate includes: a process chamber having a processing volume disposed beneath a lid of the process chamber; and one or more inductive coils disposed above the lid to inductively couple RF energy into and to form a plasma in the processing volume above a substrate support disposed within the processing volume; wherein the lid is a dielectric window comprising a first side and an opposing second side that faces the processing volume, and wherein the lid has a dielectric coefficient that spatially varies to provide a varied power coupling of RF energy from the one or more inductive coils to the processing volume.

    Abstract translation: 本文提供电感耦合等离子体(ICP)反应器的实施例。 在一些实施例中,用于电感耦合等离子体反应器的电介质窗包括:主体,包括第一侧,与第一侧相对的第二侧,边缘和中心,其中介电窗口具有在空间上变化的介电系数。 在一些实施例中,用于处理衬底的装置包括:处理室,其具有设置在处理室的盖下方的处理容积; 以及设置在所述盖上方的一个或多个感应线圈,以将RF能量感应耦合并在处理体积中形成等离子体,所述等离子体位于设置在所述处理容积内的衬底支撑件上方; 其中所述盖是包括面向所述处理体积的第一侧和相对的第二侧的电介质窗,并且其中所述盖具有空间变化的介电系数,以提供来自所述一个或多个感应线圈的RF能量与所述一个或多个感应线圈的变化的功率耦合 处理量。

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