公开(公告)号：US20210375601A1

公开(公告)日：2021-12-02

申请号：US17125178

申请日：2020-12-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Ramesh GOPALAN ,  Hemant MUNGEKAR ,  Guomin MAO ,  Rongping WANG ,  Teryl PRATT

IPC: H01J37/32

Abstract: Methods and apparatus for plasma processing are provided herein. For example, apparatus can include a system for plasma processing including a remote plasma source including a supply terminal configured to connect to a power source and an output configured to deliver RF power to a plasma block of the remote plasma source for creating a plasma and a controller configured to control operation of the remote plasma source based on a measured input power at the supply terminal.

公开(公告)号：US20210375701A1

公开(公告)日：2021-12-02

申请号：US16885514

申请日：2020-05-28

Applicant: APPLIED MATERIALS, INC.

Inventor： Ramesh GOPALAN ,  Hemant MUNGEKAR ,  Guomin MAO ,  Rongping WANG ,  Teryl PRATT

IPC: H01L21/66 ,  H01J37/32

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, apparatus can include a system for processing a substrate, comprising: a remote plasma source including a supply terminal configured to connect to a power source and an output configured to deliver RF power to a plasma block of the remote plasma source for creating a plasma; and a controller connected to the supply terminal of the remote plasma source and configured to determine, based on a predictive model of the remote plasma source, whether a power at the supply terminal is equal to a predetermined threshold during processing of a substrate, wherein the predictive model includes a correlation of remote plasma performance with delivered RF power at the output, and to control the processing of the substrate based on a determination of the predetermined threshold being met to control processing of the substrate.

公开(公告)号：US20200294769A1

公开(公告)日：2020-09-17

申请号：US16792562

申请日：2020-02-17

Applicant: Applied Materials, Inc.

Inventor： Teryl PRATT ,  Rongping WANG ,  Guomin MAO ,  Andy CHUANG

IPC: H01J37/32 ,  H05H1/36

Abstract: A plasma ignition circuit includes a transformer having a primary coil configured to couple an RF power supply. A first secondary coil is configured to couple a remote plasma source (RPS), and a second secondary coil. The plasma ignition circuit further includes a control switch having an input configured to couple the second secondary coil and an output configured to capacitively couple the RPS and a switch controller. The switch controller is configured to upon sensing a secondary RF voltage applied to the second secondary coil in response to an RF voltage applied by RF power supply to the primary coil, enable the control switch to capacitively apply the secondary RF voltage to the RPS to ignite a plasma within the RPS. Upon sensing a drop in plasma impedance when the plasma is ignited, disable the control switch to discontinue applying the secondary RF voltage to the RPS.