公开(公告)号：US10096455B2

公开(公告)日：2018-10-09

申请号：US14486223

申请日：2014-09-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Thanh Nguyen ,  Rongjun Wang ,  Muhammad M. Rasheed ,  Xianmin Tang

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/56

Abstract: Apparatus for physical vapor deposition are provided. In some embodiments, an apparatus for use in a physical vapor deposition substrate processing chamber includes a process shield having a central opening passing through a body of the process shield and defining a processing volume of the substrate processing chamber, wherein the process shield comprises an annular dark space shield fabricated from a ceramic material and an annular ground shield fabricated from a conductive material, and wherein a ratio of a length of the annular dark space shield to a length of the annular ground shield is about 1:2 to about 1:1.6.