公开(公告)号：US10573493B2

公开(公告)日：2020-02-25

申请号：US15070847

申请日：2016-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Valentin N. Todorow ,  Samer Banna ,  Ankur Agarwal ,  Zhigang Chen ,  Tse-Chiang Wang ,  Andrew Nguyen ,  Martin Jeff Salinas ,  Shahid Rauf

IPC: C23C16/00 ,  H01L21/326 ,  H01J37/32 ,  B44C1/22 ,  C23C16/505

Abstract: Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.