公开(公告)号：US20190326120A1

公开(公告)日：2019-10-24

申请号：US16381776

申请日：2019-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Guoqiang JIAN ,  WEI TANG ,  CHI-CHOU LIN ,  PAUL MA ,  YIXIONG YANG ,  MEI CHANG ,  WENYI LIU

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/02 ,  H01L29/49

Abstract: The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.