公开(公告)号：US20140151331A1

公开(公告)日：2014-06-05

申请号：US13778252

申请日：2013-02-27

Applicant: APPLIED MATERIALS, INC.

Inventor： VALENTIN N. TODOROW ,  MICHAEL D. WILLWERTH ,  YING-SHENG LIN ,  DAVID PALAGASHVILI

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32477 ,  H01J37/32651

Abstract: Methods and apparatus for plasma processing of substrates are provided herein. In some embodiments, a deposition shield for use in processing a substrate having a given width may include a first plate having a first plurality of holes disposed through a thickness of the first plate; and a second plate disposed below the first plate and having a second plurality of holes disposed through a thickness of the second plate, wherein individual holes in the first plurality of holes and the second plurality of holes are not aligned.

Abstract translation: 本文提供了基板等离子体处理的方法和装置。 在一些实施例中，用于处理具有给定宽度的衬底的沉积屏蔽可以包括具有穿过第一板的厚度设置的第一多个孔的第一板; 以及第二板，其设置在所述第一板的下方，并且具有穿过所述第二板的厚度设置的第二多个孔，其中所述第一多个孔中的各个孔和所述第二多个孔不对准。