CAPACITIVE SENSOR HOUSING FOR CHAMBER CONDITION MONITORING

    公开(公告)号:US20220341867A1

    公开(公告)日:2022-10-27

    申请号:US17861034

    申请日:2022-07-08

    Abstract: Embodiments disclosed herein include a sensor assembly. In an embodiment, the sensor assembly comprises a sensor module and a housing assembly. In an embodiment, the sensor module comprises a substrate, a capacitor with a first electrode and a second electrode on the substrate, and a capacitive-to-digital converter (CDC) electrically coupled to the first electrode and the second electrode. In an embodiment, the housing assembly is attached to the sensor module and comprises a shaft, wherein the shaft is hollow, and a cap over a first end of the shaft, wherein the cap has an opening to expose the capacitor.

    LOW CONTACT AREA SUBSTRATE SUPPORT FOR ETCHING CHAMBER

    公开(公告)号:US20210035851A1

    公开(公告)日:2021-02-04

    申请号:US16526840

    申请日:2019-07-30

    Abstract: Embodiments of a substrate support for use in a processing chamber are provided herein. In some embodiments, a substrate support includes a pedestal having an upper surface configured to accommodate a lift pin, a first annular region near an edge of the pedestal, and a second annular region disposed between the first annular region and a center of the pedestal, wherein the pedestal includes a first plurality of holes extending from the upper surface at regular intervals along the first annular region and a second plurality of holes extending from the upper surface at regular intervals along the second annular region; and a non-metal ball comprising aluminum oxide disposed in each hole of the first plurality of holes and the second plurality of holes, wherein an upper surface of each of the non-metal balls is raised with respect to the upper surface of the pedestal to define a support surface.

    DEPOSITION SHIELD FOR PLASMA ENHANCED SUBSTRATE PROCESSING
    3.
    发明申请
    DEPOSITION SHIELD FOR PLASMA ENHANCED SUBSTRATE PROCESSING 审中-公开
    用于等离子体增强基板处理的沉积屏蔽

    公开(公告)号:US20140151331A1

    公开(公告)日:2014-06-05

    申请号:US13778252

    申请日:2013-02-27

    CPC classification number: H01J37/321 H01J37/32477 H01J37/32651

    Abstract: Methods and apparatus for plasma processing of substrates are provided herein. In some embodiments, a deposition shield for use in processing a substrate having a given width may include a first plate having a first plurality of holes disposed through a thickness of the first plate; and a second plate disposed below the first plate and having a second plurality of holes disposed through a thickness of the second plate, wherein individual holes in the first plurality of holes and the second plurality of holes are not aligned.

    Abstract translation: 本文提供了基板等离子体处理的方法和装置。 在一些实施例中,用于处理具有给定宽度的衬底的沉积屏蔽可以包括具有穿过第一板的厚度设置的第一多个孔的第一板; 以及第二板,其设置在所述第一板的下方,并且具有穿过所述第二板的厚度设置的第二多个孔,其中所述第一多个孔中的各个孔和所述第二多个孔不对准。

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