公开(公告)号：US20220068648A1

公开(公告)日：2022-03-03

申请号：US17522100

申请日：2021-11-09

Applicant: APPLIED Materials, Inc.

Inventor： Scott Falk ,  Jun-Feng LU ,  Qintao Zhang

IPC: H01L21/265 ,  H01L21/322 ,  H01L21/302 ,  H01L21/3115 ,  H01L23/00 ,  H01L21/02

Abstract: A method may include providing a substrate, where the substrate includes a first main surface and a second main surface, opposite the first main surface. The second main surface may include a stress compensation layer. The method may include directing ions to the stress compensation layer in an ion implant procedure. The ion implant procedure may include exposing a first region of the stress compensation layer to a first implant process, wherein a second region of the stress compensation layer is not exposed to the first implant process.

公开(公告)号：US20240130117A1

公开(公告)日：2024-04-18

申请号：US18481163

申请日：2023-10-04

Applicant: Applied Materials, Inc.

Inventor： Sipeng GU ,  Liang HONG ,  Jun-Feng LU

IPC: H10B12/00

CPC classification number: H10B12/485 ,  H10B12/02

Abstract: Disclosed herein are approaches for forming dynamic DRAM devices without trench fill voids. A method may include providing a plurality of trenches in a substrate, the plurality of trenches defining a plurality of device structures, and depositing a plurality of layers over the device structures. The layers may include a first layer over the device structures, a second layer over the first layer, and a third layer over the second layer. The method may further include forming a plurality of contact trenches through the plurality of layers to expose one or more device structures of the plurality of device structures, and directing ions into a sidewall of the trenches at a non-zero angle, wherein the ions impact the third layer without impacting the second layer. The method may further include forming a fill material within the trenches after the ions are directed into the sidewall of the trenches.