Abstract:
A memory device includes an array of memory cells arranged as a plurality of rows and columns, a plurality of word lines, each word line being coupled to an associated row of memory cells, and a plurality of bit lines, each bit line being coupled to an associated column of memory cells. Access circuitry is coupled to the word lines and the bit lines in order to perform access operations in respect of selected memory cells within the array. Control circuitry controls operation of the access circuitry and includes self-timed path (STP) delay circuitry. The control circuitry employs the delay indication when controlling the access circuitry to perform said access operations. Voltage supply control circuitry switches the voltage supply to at least one portion of the STP delay circuitry between a peripheral voltage supply and an array voltage supply dependent on a control signal.
Abstract:
A method of generating a layout of an integrated circuit is disclosed, the layout incorporating both standard cells and at least one memory instance generated by a memory compiler to define a memory device of the integrated circuit. Input data is received specifying one or more properties of a desired memory instance. The memory compiler generates the desired memory instance based on the input data and using the specified memory architecture. A standard cell library is provided. The memory compiler references at least one property of the standard cell library in order to generate the desired memory instance. The layout is then generated by populating standard cell rows with standard cells selected from the standard cell library in order to provide the functional components required by the integrated circuit, and integrating into the layout the desired memory instance provided by the memory compiler.