公开(公告)号：US09637823B2

公开(公告)日：2017-05-02

申请号：US14231317

申请日：2014-03-31

Applicant: ASM IP HOLDING B.V.

Inventor： Harm C. M. Knoops ,  Koen de Peuter ,  Wilhelmus M. M. Kessels

IPC: H01L21/44 ,  C23C16/52 ,  C23C16/34 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/345 ,  C23C16/45542 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

Abstract: Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma. Reduced residence time increases the quality of the deposited layer, such as reducing wet etch rates, increasing index of refraction and/or reducing impurities in the layer. For example, dielectric layers, particularly silicon nitride films, formed from such optimized plasma ALD processes have low levels of impurities remaining from the silicon precursor.

公开(公告)号：US10072337B2

公开(公告)日：2018-09-11

申请号：US15499188

申请日：2017-04-27

Applicant: ASM IP HOLDING B.V.

Inventor： Harm C. M. Knoops ,  Koen de Peuter ,  Wilhelmus M. M. Kessels

IPC: H01L21/44 ,  C23C16/52 ,  C23C16/34 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/345 ,  C23C16/45542 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

Abstract: Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma. Reduced residence time increases the quality of the deposited layer, such as reducing wet etch rates, increasing index of refraction and/or reducing impurities in the layer. For example, dielectric layers, particularly silicon nitride films, formed from such optimized plasma ALD processes have low levels of impurities remaining from the silicon precursor.

公开(公告)号：US12077864B2

公开(公告)日：2024-09-03

申请号：US17039632

申请日：2020-09-30

Applicant: ASM IP HOLDING B.V.

Inventor： Harm C. M. Knoops ,  Koen de Peuter ,  Wilhelmus M. M. Kessels

IPC: C23C16/52 ,  C23C16/34 ,  C23C16/455 ,  H01L21/02

CPC classification number: C23C16/52 ,  C23C16/345 ,  C23C16/45542 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

Abstract: Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma. Reduced residence time increases the quality of the deposited layer, such as reducing wet etch rates, increasing index of refraction and/or reducing impurities in the layer. For example, dielectric layers, particularly silicon nitride films, formed from such optimized plasma ALD processes have low levels of impurities remaining from the silicon precursor.

公开(公告)号：US10822700B2

公开(公告)日：2020-11-03

申请号：US16675904

申请日：2019-11-06

Applicant: ASM IP HOLDING B.V.

Inventor： Harm C. M. Knoops ,  Koen de Peuter ,  Wilhelmus M. M. Kessels

IPC: C23C16/52 ,  C23C16/34 ,  C23C16/455 ,  H01L21/02

Abstract: Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma. Reduced residence time increases the quality of the deposited layer, such as reducing wet etch rates, increasing index of refraction and/or reducing impurities in the layer. For example, dielectric layers, particularly silicon nitride films, formed from such optimized plasma ALD processes have low levels of impurities remaining from the silicon precursor.

公开(公告)号：US10480078B2

公开(公告)日：2019-11-19

申请号：US16116321

申请日：2018-08-29

Applicant: ASM IP HOLDING B.V.

Inventor： Harm C. M. Knoops ,  Koen de Peuter ,  Wilhelmus M. M. Kessels

IPC: C23C16/52 ,  C23C16/34 ,  C23C16/455 ,  H01L21/02

Abstract: Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma. Reduced residence time increases the quality of the deposited layer, such as reducing wet etch rates, increasing index of refraction and/or reducing impurities in the layer. For example, dielectric layers, particularly silicon nitride films, formed from such optimized plasma ALD processes have low levels of impurities remaining from the silicon precursor.