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1.
公开(公告)号:US20190189422A1
公开(公告)日:2019-06-20
申请号:US16270099
申请日:2019-02-07
IPC分类号: H01L21/02 , C23C16/02 , H01L21/306 , H01L21/308 , C23C16/56 , C23C16/52 , C23C16/455 , C23C16/34
CPC分类号: H01L21/0228 , C23C16/02 , C23C16/34 , C23C16/45527 , C23C16/4554 , C23C16/45542 , C23C16/45544 , C23C16/52 , C23C16/56 , H01L21/02126 , H01L21/0217 , H01L21/02211 , H01L21/02247 , H01L21/02274 , H01L21/02304 , H01L21/02312 , H01L21/02315 , H01L21/02318 , H01L21/02337 , H01L21/0234 , H01L21/30604 , H01L21/3081 , H01L21/3086
摘要: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.
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公开(公告)号:US20190051826A1
公开(公告)日:2019-02-14
申请号:US16164510
申请日:2018-10-18
IPC分类号: H01L45/00 , C23C16/36 , C23C16/455 , H01L21/02 , C23C16/34 , H01L27/24 , H01L21/283 , H01L21/768
CPC分类号: H01L45/124 , C23C16/345 , C23C16/36 , C23C16/45534 , C23C16/45542 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/02315 , H01L21/283 , H01L21/76829 , H01L27/2481 , H01L45/06 , H01L45/065 , H01L45/12 , H01L45/1233 , H01L45/126 , H01L45/141 , H01L45/16
摘要: A method of forming a silicon-containing dielectric material. The method includes forming a plasma comprising nitrogen radicals, absorbing the nitrogen radicals onto a substrate, and exposing the substrate to a silicon-containing precursor in a non-plasma environment to form monolayers of a silicon-containing dielectric material on the substrate. Additional methods are also described, as are semiconductor device structures including the silicon-containing dielectric material and methods of forming the semiconductor device structures.
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公开(公告)号:US20180342389A1
公开(公告)日:2018-11-29
申请号:US16037932
申请日:2018-07-17
发明人: Kapu Sirish Reddy , Nagraj Shankar , Shankar Swaminathan , Meliha Gozde Rainville , Frank L. Pasquale
IPC分类号: H01L21/02 , H01L21/768 , C23C16/455 , C23C16/40 , H01L23/532 , H01L23/528
CPC分类号: H01L21/02145 , C23C16/401 , C23C16/403 , C23C16/45525 , C23C16/45531 , C23C16/45542 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02178 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/31116 , H01L21/76807 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/5283 , H01L23/53238 , H01L23/53266 , H01L23/53295
摘要: Dielectric composite films characterized by a dielectric constant (k) of less than about 7 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers. The dielectric composite film in one embodiment includes Al, Si, and O and has a thickness of between about 10-100 Å. The dielectric composite film can reside between two layers of inter-layer dielectric, and may be in contact with metal layers. An apparatus for depositing such dielectric composite films includes a process chamber, a conduit for delivering an aluminum containing precursor to the process chamber, a second conduit for delivering a silicon-containing precursor to the process chamber and a controller having program instructions for depositing the dielectric composite film from these precursors, e.g., by reacting the precursors adsorbed to the substrate with an oxygen-containing species.
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公开(公告)号:US10072337B2
公开(公告)日:2018-09-11
申请号:US15499188
申请日:2017-04-27
申请人: ASM IP HOLDING B.V.
IPC分类号: H01L21/44 , C23C16/52 , C23C16/34 , C23C16/455
CPC分类号: C23C16/52 , C23C16/345 , C23C16/45542 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/0228
摘要: Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma. Reduced residence time increases the quality of the deposited layer, such as reducing wet etch rates, increasing index of refraction and/or reducing impurities in the layer. For example, dielectric layers, particularly silicon nitride films, formed from such optimized plasma ALD processes have low levels of impurities remaining from the silicon precursor.
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5.
公开(公告)号:US20180245215A1
公开(公告)日:2018-08-30
申请号:US15757805
申请日:2016-09-09
发明人: Xinjian Lei , Moo-Sung Kim , Jianheng Li
IPC分类号: C23C16/34 , C23C16/455 , C23C16/36 , H01L21/02
CPC分类号: C23C16/345 , C23C16/303 , C23C16/36 , C23C16/45531 , C23C16/45542 , C23C16/45553 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02222 , H01L21/02274
摘要: Described herein are conformal films and methods for forming a conformal Group 4, 5, 6, 13 metal or metalloid doped silicon nitride dielectric film. In one aspect, there is provided a method of forming an aluminum silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one metal precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing into the reactor an organoaminosilane precursors to react on at least a portion of the surface of the substrate to provide a chemisorbed layer; introducing a plasma comprising nitrogen and an inert gas into the reactor to react with at least a portion of the chemisorbed layer and provide at least one reactive site wherein the plasma is generated at a power density ranging from about 0.01 to about 1.5 W/cm2; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained.
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公开(公告)号:US20180237914A1
公开(公告)日:2018-08-23
申请号:US15897209
申请日:2018-02-15
发明人: Jun OGAWA , Noriaki FUKIAGE , Shimon OTSUKI , Muneyuki OTANI , Kentaro OSHIMO , Hideomi HANE
IPC分类号: C23C16/455 , C23C16/513 , C23C16/458 , H01L21/02 , H01L21/67 , H01L21/687
CPC分类号: C23C16/45544 , C23C16/45542 , C23C16/45551 , C23C16/45578 , C23C16/4584 , C23C16/511 , C23C16/513 , H01J37/32192 , H01J37/32229 , H01J37/32449 , H01J37/32513 , H01J37/32724 , H01J37/32752 , H01J37/32899 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/67017 , H01L21/68764 , H01L21/68771
摘要: An apparatus for forming a nitride film of a raw material component on a substrate, includes: a raw material gas supply part having discharge ports that discharge a raw material gas and a purge gas, and an exhaust port; a reaction region spaced apart from the raw material gas supply part in a circumferential direction of a rotary table; a modification region spaced apart from the reaction region in the circumferential direction and in which the nitride film is modified with a hydrogen gas; a first plasma generating part provided in the modification region and a second plasma generating part provided in the reaction region, and for activating a gas existing in each of the modification and reaction regions; a reaction gas supply part for supplying the ammonia gas to the reaction region; and an exhaust port that evacuates an interior of the vacuum vessel.
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公开(公告)号:US20180223429A1
公开(公告)日:2018-08-09
申请号:US15879209
申请日:2018-01-24
申请人: ASM IP Holding B.V.
发明人: Atsuki Fukazawa , Hideaki Fukuda
IPC分类号: C23C16/455 , C23C16/40 , C23C16/04 , H01L21/02
CPC分类号: C23C16/45542 , C23C16/045 , C23C16/40 , C23C16/401 , C23C16/4405 , C23C16/45553 , C23C16/45565 , H01L21/02164 , H01L21/022 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/0228
摘要: A method for depositing an oxide film on a substrate by thermal ALD and PEALD, includes: providing a substrate in a reaction chamber; depositing a first oxide film on the substrate by thermal ALD in the reaction chamber; and without breaking a vacuum, continuously depositing a second oxide film on the first oxide film by PEALD in the reaction chamber.
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公开(公告)号:US20180155835A1
公开(公告)日:2018-06-07
申请号:US15829667
申请日:2017-12-01
IPC分类号: C23C16/455 , C23C16/458 , C23C16/44 , C23C16/04
CPC分类号: C23C16/45544 , C23C16/042 , C23C16/4401 , C23C16/4412 , C23C16/45529 , C23C16/45542 , C23C16/458 , C23C16/54
摘要: The present disclosure relates to methods and apparatus for a thin film encapsulation (TFE). In one embodiment a process kit for use in an atomic layer deposition (ALD) chamber is disclosed and includes a dielectric window, a sealing frame, and a mask frame connected with the sealing frame, wherein the mask frame has a gas inlet channel and a gas outlet channel formed therein on opposing sides thereof.
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公开(公告)号:US20180138028A1
公开(公告)日:2018-05-17
申请号:US15847744
申请日:2017-12-19
IPC分类号: H01L21/02 , C23C16/455 , C23C16/52 , C23C16/50
CPC分类号: H01L21/0228 , C23C16/04 , C23C16/045 , C23C16/45534 , C23C16/45542 , C23C16/45544 , C23C16/50 , C23C16/52 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/02312 , H01L21/02532 , H01L21/02592 , H01L21/02595 , H01L21/0262
摘要: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.
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公开(公告)号:US20180096886A1
公开(公告)日:2018-04-05
申请号:US15282543
申请日:2016-09-30
发明人: Kapu Sirish Reddy , Nagraj Shankar , Shankar Swaminathan , Meliha Gozde Rainville , Frank L. Pasquale
IPC分类号: H01L21/768 , H01L23/528 , H01L23/532 , H01L21/02
CPC分类号: H01L21/02145 , C23C16/401 , C23C16/403 , C23C16/45525 , C23C16/45531 , C23C16/45542 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02178 , H01L21/02271 , H01L21/0228 , H01L21/76832 , H01L23/5283 , H01L23/53238 , H01L23/53266 , H01L23/53295
摘要: Dielectric composite films characterized by a dielectric constant (k) of less than about 7 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers. The composite films in one embodiment include at least two elements selected from the group consisting of Al, Si, and Ge, and at least one element selected from the group consisting of O, N, and C. In one embodiment the composite film includes Al, Si and O. In one implementation, a substrate containing an exposed dielectric layer (e.g., a ULK dielectric) and an exposed metal layer is contacted with an aluminum-containing compound (such as trimethylaluminum) and, sequentially, with a silicon-containing compound. Adsorbed compounds are then treated with an oxygen-containing plasma (e.g., plasma formed in a CO2-containing gas) to form a film that contains Al, Si, and O.
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