公开(公告)号：US11450591B2

公开(公告)日：2022-09-20

申请号：US16838455

申请日：2020-04-02

申请人： ASM IP HOLDING B.V.

发明人： Tom E. Blomberg ,  Linda Lindroos ,  Hannu Huotari

IPC分类号： H01L23/48 ,  H01L21/285 ,  C23C16/455 ,  H01L21/768 ,  C23C16/34

摘要： An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.

公开(公告)号：US20230085443A1

公开(公告)日：2023-03-16

申请号：US17932605

申请日：2022-09-15

申请人： ASM IP HOLDING B.V.

发明人： Tom E. Blomberg ,  Linda Lindroos ,  Hannu Huotari

IPC分类号： H01L23/48 ,  H01L21/285 ,  C23C16/455 ,  H01L21/768 ,  C23C16/34

摘要： An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.

公开(公告)号：US20200235037A1

公开(公告)日：2020-07-23

申请号：US16838455

申请日：2020-04-02

申请人： ASM IP HOLDING B.V.

发明人： Tom E. Blomberg ,  Linda Lindroos ,  Hannu Huotari

IPC分类号： H01L23/48 ,  H01L21/285 ,  C23C16/455 ,  H01L21/768 ,  C23C16/34

摘要： An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.

公开(公告)号：US11823976B2

公开(公告)日：2023-11-21

申请号：US17932605

申请日：2022-09-15

申请人： ASM IP HOLDING B.V.

发明人： Tom E. Blomberg ,  Linda Lindroos ,  Hannu Huotari

IPC分类号： H01L23/48 ,  H01L21/285 ,  C23C16/455 ,  H01L21/768 ,  C23C16/34

CPC分类号： H01L23/48 ,  C23C16/34 ,  C23C16/45527 ,  H01L21/28562 ,  H01L21/76841 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/0001

摘要： An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.

公开(公告)号：US20150303101A1

公开(公告)日：2015-10-22

申请号：US14255799

申请日：2014-04-17

申请人： ASM IP HOLDING B.V.

发明人： Tom E. Blomberg ,  Linda Lindroos ,  Hannu Huotari

IPC分类号： H01L21/768 ,  H01L23/48

摘要： An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.

摘要翻译： 用于在衬底上沉积含氟薄膜的原子层沉积（ALD）工艺可以包括多个超级循环。 每个超级循环可以包括金属氟化物子循环和还原子循环。 金属氟化物子循环可以包括使基底与金属氟化物接触。 还原子循环可以包括交替地和顺序地将底物与还原剂和氮反应物接触。