公开(公告)号：US20140116335A1

公开(公告)日：2014-05-01

申请号：US13665366

申请日：2012-10-31

Applicant: ASM IP HOLDING B.V.

Inventor： Naoto Tsuji ,  Yasushi Fukasawa

IPC: H01L21/02

CPC classification number: C23C16/4405 ,  B08B7/0057 ,  C23C16/482 ,  H01J37/32862 ,  H01L21/02348 ,  H01L21/67115

Abstract: A UV irradiation apparatus for processing a semiconductor substrate includes: a UV lamp unit; a reaction chamber disposed under the UV lamp unit; a gas ring with nozzles serving as a first electrode between the UV lamp unit and the reaction chamber; a transmission window supported by the gas ring; an RF shield which covers a surface of the transmission window facing the UV lamp unit; a second electrode disposed in the reaction chamber for generating a plasma between the first and second electrodes; and an RF power source for supplying RF power to one of the first or second electrode.

Abstract translation: 一种用于处理半导体衬底的UV照射设备包括：UV灯单元; 设置在所述UV灯单元下方的反应室; 具有用作UV灯单元和反应室之间的第一电极的喷嘴的气环; 由气环支撑的透射窗; 覆盖面向UV灯单元的透射窗的表面的RF屏蔽; 设置在所述反应室中的用于在所述第一和第二电极之间产生等离子体的第二电极; 以及用于向第一或第二电极之一提供RF功率的RF电源。