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    Substrate processing apparatus having a gas-mixing manifold
    1.
    发明授权
    Substrate processing apparatus having a gas-mixing manifold 有权

    公开(公告)号：US11118262B2

    公开(公告)日：2021-09-14

    申请号：US16157303

    申请日：2018-10-11

    Applicant: ASM IP Holding B.V.

    Inventor： Naoto Tsuji ,  Masaki Hirayama

    IPC: C23C16/455 ,  B01F5/02 ,  H01J37/32 ,  B01F3/02 ,  C23C16/50 ,  B01F5/00 ,  B01F15/00

    Abstract: A substrate processing apparatus includes a chamber, a manifold including a tubular portion above the chamber, first and second introduction pipes provided on a side surface of the tubular portion, and a gas guide portion to guide, in a direction opposite the chamber, gases introduced from the first and second introduction pipes into the tubular portion, and then introduce the gases into the chamber. The gas guide portion does not contact a top of the manifold, and the manifold includes a space above the gas guide portion to allow the gases to flow from between the gas guide portion and the tubular portion into a space surrounded by the gas guide portion. The gas guide portion advantageously enables the gases to broadly diffuse and uniformly mix, increasing the quality of a film formed on a substrate inside the chamber.

    Semiconductor manufacturing apparatus
    3.
    发明授权
    Semiconductor manufacturing apparatus 有权

    公开(公告)号：US09963782B2

    公开(公告)日：2018-05-08

    申请号：US14621167

    申请日：2015-02-12

    Applicant: ASM IP Holding B.V.

    Inventor： Naoto Tsuji

    IPC: C23C16/44 ,  H01J37/32

    CPC classification number: C23C16/4412 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32834

    Abstract: A semiconductor manufacturing apparatus includes a stage, and an exhaust duct having an annular passage surrounding a processing space over the stage, an annular slit through which a gas supplied to the processing space is led into the annular passage, and an exhaust port through which the gas in the annular passage is discharged to the outside, wherein the opening-area percentage of the slit is increased with increase in distance from the exhaust port.

    Method for Forming Si-Containing Film Using Two Precursors by ALD
    5.
    发明申请
    Method for Forming Si-Containing Film Using Two Precursors by ALD 有权
    使用ALD的两种前体形成含Si膜的方法

    公开(公告)号：US20130244446A1

    公开(公告)日：2013-09-19

    申请号：US13799708

    申请日：2013-03-13

    Applicant: ASM IP HOLDING B.V.

    Inventor： Naoto Tsuji ,  Atsuki Fukazawa ,  Noboru Takamure ,  Suvi Haukka ,  Antti Juhani Niskanen ,  Hyung Sang Park

    IPC: H01L21/02

    CPC classification number: H01L21/0228 ,  C23C16/325 ,  C23C16/345 ,  C23C16/45534 ,  C23C16/4554 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/76829

    Abstract: A method for forming a silicon-containing dielectric film on a substrate by atomic layer deposition (ALD) includes: providing two precursors, one precursor containing a halogen in its molecule, another precursor containing a silicon but no halogen in its molecule, adsorbing a first precursor, which is one of the two precursors onto a substrate to deposit a monolayer of the first precursor; adsorbing a second precursor, which is the other of the two precursors onto the monolayer of the first precursor to deposit a monolayer of the second precursor; and exposing the monolayer of the second precursor to radicals of a reactant to cause surface reaction with the radicals to form a compound monolayer of a silicon-containing film.

    Abstract translation: 通过原子层沉积（ALD）在衬底上形成含硅电介质膜的方法包括：提供两个前体，在其分子中含有卤素的一种前体，在其分子中含有硅但不含卤素的另一种前体，吸附第一 前体，其是沉积单层第一前体的底物上的两种前体之一; 将作为所述两种前体中的另一种的第二前体吸附到所述第一前体的单层上以沉积所述第二前体的单层; 并将第二前体的单层暴露于反应物的自由基以引起与自由基的表面反应以形成含硅膜的化合物单层。

    WAFER PROCESSING APPARATUS WITH FILM UNIFORMITY IMPROVEMENT CAPABILITIES
    6.
    发明公开
    WAFER PROCESSING APPARATUS WITH FILM UNIFORMITY IMPROVEMENT CAPABILITIES 审中-公开

    公开(公告)号：US20240287679A1

    公开(公告)日：2024-08-29

    申请号：US18585313

    申请日：2024-02-23

    Applicant: ASM IP Holding B.V.

    Inventor： Yongjin Jeong ,  Naoto Tsuji ,  ByeongPil Park ,  Yonjong Jeon

    IPC: C23C16/46 ,  H01L21/67

    CPC classification number: C23C16/46 ,  H01L21/67109

    Abstract: A wafer processing apparatus may be presented. The apparatus may comprise a wafer support provided with a heater for supporting and heating the wafer, a chamber for enclosing and processing the wafer, a showerhead for letting gas in the chamber, a pumping port for removing gas from the chamber, a black wall with a substantially high emissivity provided to the chamber near the pumping port and configured to partly encircle the wafer support; and a white wall with a substantially low emissivity provided to the chamber on opposite side of the pumping port and configured to partly encircle the wafer support.

    APPARATUS FOR DISPENSING A VAPOR PHASE REACTANT TO A REACTION CHAMBER AND RELATED METHODS
    9.
    发明申请
    APPARATUS FOR DISPENSING A VAPOR PHASE REACTANT TO A REACTION CHAMBER AND RELATED METHODS 审中-公开

    公开(公告)号：US20190093221A1

    公开(公告)日：2019-03-28

    申请号：US16130798

    申请日：2018-09-13

    Applicant: ASM IP Holding B.V.

    Inventor： Lucian Jdira ,  Herbert Terhorst ,  Naoto Tsuji ,  Yoshio Susa

    IPC: C23C16/448 ,  C23C16/455

    Abstract: An apparatus for dispensing a vapor phase reactant to a reaction chamber is disclosed. The apparatus may include: a first chamber configured for holding a source chemical with a first fill level; and a second chamber configured for holding the source chemical with a second fill level and in fluid communication with the first chamber via a fluid channel below the first and second fill levels. The apparatus may also include: a second chamber inlet opening in fluid communication with a pressurizing gas feed provided with a flow controller configured for controlling a flow of a pressurizing gas in the second chamber to control the first fill level in the first chamber. Methods for dispensing a vapor phase reactant are also provided.

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