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公开(公告)号：US20220093861A1
公开(公告)日：2022-03-24
申请号：US17478208
申请日：2021-09-17
Applicant: ASM IP HOLDING B.V. , IMEC VZW
Inventor： Michael Eugene Givens , Yongkook Park , Mathieu Caymax , Ali Haider , Romain Delhougne
Abstract: Disclosed are methods and systems for depositing a material comprising a germanium chalcogenide. The material may be selectively deposited onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary devices in which the layers may be incorporated include memory devices.
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