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公开(公告)号：US20250132149A1
公开(公告)日：2025-04-24
申请号：US18918187
申请日：2024-10-17
Applicant: ASM IP Holding B.V.
Inventor： Aditya Chauhan , Vivek Koladi Mootheri , Lorenzo Bottiglieri , Andrea IIIiberi , Michael Eugene Givens
IPC: H01L21/02 , C23C16/44 , C23C16/455 , H01L29/786
Abstract: Methods for forming hydrogen barriers for, for example, channel layers in thin film transistors. The hydrogen barriers can comprise doped dielectrics such as magnesium-doped aluminum oxide. Further described are related structures and systems.
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